Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Xin Shan,Zeyu Wu,Yangyang Xie,Xin Lin,Baozeng Zhou,Yupeng Zhang,Xiaobing Yan,Fang Wang,Tian-Ling Ren,Kai Liang Zhang

DOI: https://doi.org/10.1039/d2nr04530c

IF: 6.7

2022-12-09

Nanoscale

Abstract:High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of mature mechanism makes it difficult to obtain high-quality single crystals in large-scale 2D materials. In this work, we prepared a centimeter-scale single crystal α-MoO3 via oxygen assisted substrate-free self-standing growth method and mechanism, and constructed the high-performance synaptic devices based on the centimeter-scale α-MoO3. The oxygen assisted growth mechanism of α-MoO3 was developed from the periodic bond chain theory. The large-scale α-MoO3 is up to 2 cm and exhibits high homogeneity and single crystalline characteristic. Furthermore, with an optimized oxygen partial pressure (18%), the centimeter-scale α-MoO3 makes the as-prepared memristor achieve continuous conductance modulation. Meanwhile, the trap-controlled electron conducting mechanism of the memristor was demonstrated though I-V curve fitting analysis at various temperatures, in which the high resistance state section accords with space-charge-limited conduction (SCLC) mode. Moreover, the as-prepared α-MoO3 memristors exhibit low-energy consumption and well emulate the essential synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation and long-term plasticity.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry