Abstract:The discovery of graphene in the early 2000s led to the rapid development of an emerging class of material system, now widely known as two-dimensional (2D) materials. The atomic-scale thickness of 2D materials leads to rich transport physics beneficial for many electronic/optoelectronic devices. 2D transition-metal dichalcogenides (2D-TMDCs) have been widely investigated in logic applications over the past decade. However, out-of-plane transport in ultrathin 2D-TMDCs and the resulting applications in memristive devices remain relatively less explored. Challenges remain in large-area growth, as well as in the fundamental understanding of resistance switching in 2D-TMDC films. In this work, we report a systematic investigation of resistive switching in monolayer (1L) MoS2 films. We demonstrate large-area growth of chemical vapor-deposited (CVD) 1L-MoS2 films. Two-terminal cross-point devices are fabricated with 1L MoS2 as the active material. Different switching mechanisms emerge in the fabricated Au/Ti/1L-MoS2/Au/Cr devices depending on the operating conditions. We observe a partially volatile mode of operation that can be used to mimic the dynamics of a dendritic junction in a biological neuron. While dendritic junctions are generally ignored in machine learning, they play a crucial role in biological networks through signal filtering and integration. This, in turn, leads to enhanced energy efficiency. By demonstrating MoS2-based dendritic memristive devices, we envisage the development of more efficient and bioinspired neural networks.

Memory Device Based on MoS 2 -Polyvinyl Alcohol for Simulating Synaptic Behavior

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Engineering the Synaptic Kinetic Process into Memristive Device

Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor.

Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

Fabricating Molybdenum Disulfide Memristors

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS 2 Surface

A high linearity and energy-efficient artificial synaptic device based on scalable synthesized MoS2

Memristive devices with short-term and long-term memory behaviors for processing temporal information

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS <sub>2</sub> Surface

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film

Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

Electronic Imitation of Behavioral and Psychological Synaptic Activities Using Tiox/Al2o3-Based Memristor Devices

Emulating Dynamic Synaptic Plasticity over Broad Timescales with Memristive Device

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating

Memristors with Diffusive Dynamics As Synaptic Emulators for Neuromorphic Computing

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing