Abstract:Electronic synaptic devices are important building blocks for neuromorphic computational systems that can go beyond the constraints of von Neumann architecture. Although two‐terminal memristive devices are demonstrated to be possible candidates, they suffer from several shortcomings related to the filament formation mechanism including nonlinear switching, write noise, and high device conductance, all of which limit the accuracy and energy efficiency. Electrochemical three‐terminal transistors, in which the channel conductance can be tuned without filament formation provide an alternative platform for synaptic electronics. Here, an all‐solid‐state electrochemical transistor made with Li ion–based solid dielectric and 2D α‐phase molybdenum oxide (α‐MoO3) nanosheets as the channel is demonstrated. These devices achieve nonvolatile conductance modulation in an ultralow conductance regime (<75 nS) by reversible intercalation of Li ions into the α‐MoO3 lattice. Based on this operating mechanism, the essential functionalities of synapses, such as short‐ and long‐term synaptic plasticity and bidirectional near‐linear analog weight update are demonstrated. Simulations using the handwritten digit data sets demonstrate high recognition accuracy (94.1%) of the synaptic transistor arrays. These results provide an insight into the application of 2D oxides for large‐scale, energy‐efficient neuromorphic computing networks. All‐solid‐state synaptic transistors based on 2D α‐MoO3 nanosheets are fabricated. The operation mechanism is based on the gate voltage–induced reversible intercalation of Li‐ion dopants into α‐MoO3 channel lattice, which engenders bidirectional, near‐linear analog modulation of channel conductance in an ultralow conductance regime (<75 nS). The essential functionalities of synapses and neuromorphic computing for image recognition are demonstrated.

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

2D Mos2 Neuromorphic Devices for Brain-Like Computational Systems

A Synaptic Transistor Based on Monolayer Monocrystalline‐MoS2 for Neuromorphic Applications

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance

Electrostatic Aid-Free Photo-Floating Gate Two Dimensional MoS2 Synaptic Transistors

A Synaptic Transistor Based on Quasi-2d Molybdenum Oxide

Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS 2 Thin Film for Neuromorphic Application

Electrolyte-Gated Flexible MoS 2 Synaptic Transistors with Short-term Plasticity

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Electrolyte-Gated Flexible MoS2 Synaptic Transistors with Short-Term Plasticity

Power efficient MoS2 synaptic devices based on maxwell-wagner interfacial charging in binary oxides

MoS2 synaptic transistor with one-step manufacture

Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor.

Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)

A synapse with low power consumption based on MoTe2/SnS2heterostructure.

A Synapse with Low Power Consumption Based on MoTe2/SnS2 Heterostructure

Simulation of Laterally Coupled InGaZnO 4 -Based Electric-Double-Layer Transistors for Synaptic Electronics