Abstract:Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of P4FTVT‐C32 with indium tin oxide (ITO) source/drain (S/D) electrodes electrodes. P4FTVT‐C32 thin film exhibits n‐type unipolar property with the low work functional (WF) ITO and p‐type unipolar property with the high WF ITO modified by polyethylenimine ethoxylated (PEIE) and HCl:InCl3, respectively. This method offers great promise for next‐generation organic semiconductors integrated circuits. Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of diketopyrrolopyrrole‐based conjugated polymer (P4FTVT‐C32) with indium tin oxide (ITO) source/drain (S/D) electrodes. P4FTVT‐C32 thin film exhibits n‐type unipolar property with the low work functional (WF) ITO S/D electrodes modified by polyethylenimine ethoxylated (PEIE) and it exhibits p‐type unipolar property with the high WF ITO S/D electrodes modified by HCl:InCl3. Hence, complementary inverters with transition voltages near VDD/2 and the maximum gain of 138 converting "1" state input into "0" state output are achieved by two different modifications via screen printing on ITO electrodes and then, only one‐time bar coating of P4FTVT‐C32. To further improve the performance and the uniformity of the OFET devices, the modification of octadecyltrichlorosilane (OTS) is also introduced. This work provides an easy‐handling method for the fabrication of low‐cost, high performance organic electronic devices and integrated circuits.

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