Low-Voltage Polymer Monolayer Transistors for High-Gain Unipolar and Complementary Logic Inverters
Miao Cheng,Yanqin Zhang,Lei Zheng,Jianwei Zhang,Yifan Xie,Qingqing Jin,Yue Tian,Jinyao Wang,Hong-Mei Xiao,Chunmeng Dou,Zhenzhong Yang,Mengmeng Li,Ling Li,Ming Liu
DOI: https://doi.org/10.1039/d4tc01715c
IF: 6.4
2024-05-26
Journal of Materials Chemistry C
Abstract:Cutting-edge integrated circuits based on organic transistors, though promising, encounter a notable obstacle due to their tendency for high power consumption, thereby constraining their broader practical applications. This study demonstrates low-voltage polymer monolayer thin-film transistors (TFTs) and high-gain logic inverters, where the utilization of thin AlO x layer as gate dielectric effectively enhances the gate controllability for TFTs. A photolithography-compatible method using sacrificial layer is proposed to pattern the polymer monolayer, which significantly reduces off-state and gate leakage currents to 10 -12 A and achieves a steep subthreshold swing of 86 mV/dec. These device performances generate a maximum intrinsic gain of 10 4 V/V, enabling the development of zero- V GS -load logic inverters with voltage gains up to 251 V/V at -3 V operation voltage ( V DD ). Additionally, the hybrid complementary inverters by integrating with amorphous indium gallium zinc oxide (IGZO) exhibit an ultra-high voltage gain of 841 V/V at V DD = 5 V and 7436 V/V at V DD = 30 V, potentially setting a new benchmark for logic inverters across various semiconductor systems. These results open new avenues for advancements in low-voltage organic and hybrid logics tailored for portable and wearable electronics.
materials science, multidisciplinary,physics, applied