Charge trapping and photovoltaic characteristics in monocrystalline silicon solar cells employing molybdenum oxide and copper oxide stacked hole-selective contacts

Chin-Lung Cheng,Chi-Chung Liu,Wen-Ting Wang
DOI: https://doi.org/10.1016/j.vacuum.2023.112326
IF: 4
2023-06-24
Vacuum
Abstract:A hole-selective contact (HSC) composed of stacked layers of molybdenum oxide (MoO x ) and copper oxide (CuO x ), called MOCOSL, has been proposed as passivation booster for screen-printed monocrystalline silicon solar cell (SMSC) applications. The passivation quality of MOCOSL is investigated by characterizing its charge trapping properties, including fixed oxide charge (Q f ) and interface trap density (D it ). The conversion efficiency (CE) of SMSCs is improved by MOCOSL, resulting in an increase from 20.66% to 21.76%. This improvement is attributed to an increase in the negative Q f and a decrease in D it , which result in an increase in the open circuit voltage (V oc ) and short circuit current (J sc ). Specifically, the number of negative Q f is increased by MOCOSL, which helps to reduce the recombination of charge carriers.
materials science, multidisciplinary,physics, applied
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