Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

Small Subthreshold Swing Diamond Field Effect Transistors with SnO2 Gate Dielectric

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

Performance of hydrogen-terminated diamond MOSFET with LaB<sub>6</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Normally-off C-H Diamond FETs with Partial Al/C-O Diamond Junction Attaining Low Off-State Current

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al 2 O 3 dielectric layer

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs with Al2O3/SiO2 Bi-Layer Passivation at 2 GHz