Abstract:Hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on a polycrystalline diamond substrate. The device has a gate length of 2 μm and uses Al2O3 grown by atomic layer deposition at 300 °C as a gate dielectric and passivation layer. The Al2O3/H-diamond interfacial band configuration was investigated by X-ray photoelectron spectroscopy, and a large valence band offset (3.28 eV) that is very suitable for p-channel H-diamond FETs was observed. Meanwhile, the measured O/Al ratio hints that there are Oi or VAl defects in the Al2O3 dielectric, which can work as an acceptorlike transfer doping material on a H-diamond surface. The device delivers the maximum saturation drain current of over 200 mA/mm, which is the highest for 2-μm H-diamond MOSFETs with the gate dielectric or passivation layer grown at 300 °C or higher temperature. The ultrahigh on/off ratio of 1010 and ultralow gate leakage current of below 10−12 A have been achieved. The high device performance is ascribed to the ultrahigh carrier density, good interface characteristics, and device processes. In addition, the transient drain current response of the device can follow the gate voltage switching on/off pulse at a frequency from 100 kHz to 1 MHz, which indicates the potential of the H-diamond FETs in power switch applications.

Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al 2 O 3 dielectric layer

Electrical Properties of Yttrium Gate Hydrogen-Terminated Diamond Field Effect Transistor with Al2O3 Dielectric Layer

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Large VTH of Normally-OFF Field Effect Transistor with Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

H-diamond MOS Interface Properties and FET Characteristics with High-Temperature ALD-grown HfO2 Dielectric

High Temperature (300 °C) ALD Grown Al2O3 on Hydrogen Terminated Diamond: Band Offset and Electrical Properties of the MOSFETs

Diamond Field Effect Transistors Using Bilayer Dielectrics Yb2TiO5/Al2O3 on Hydrogen-Terminated Diamond

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with Al 2 O 3 Dielectric Layer Formed by Thermal Oxidation of Al

Hydrogen-terminated diamond field-effect transistor with AlO x dielectric layer formed by autoxidation

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor with Ferroelectric HfZrOx/Al2O3Gate Dielectrics

Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3

High-threshold-voltage and Low-Leakage-current of Normally-off H-diamond FET with Self-Aligned Zr/ZrO2 Gate

Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiO4/Al2O3

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality