Abstract:Though the complementary power field effect transistors (FETs), e.g., metal-oxide-semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. In this paper, we propose the first work to investigate the impact of fixed positive surface charge density on achieving normally-off and controlling threshold voltage operation obtained on p-channel two-dimensional hole gas (2DHG) hydrogen-terminated (C-H) diamond FET using nitrogen doping in the diamond substrate. In general, a p-channel diamond MOSFET demonstrates the normally-on operation, but the normally-off operation is also a critical requirement of the feasible electronic power devices in terms of safety operation. The characteristics of the C-H diamond MOSFET have been analyzed with the two demonstrated charge sheet models using the two-dimensional Silvaco Atlas TCAD. It shows that the fixed-Fermi level in the bulk diamond is 1.7 eV (donor level) from the conduction band minimum. However, the upward band bending has been obtained at Al2O3/SiO2/C-H diamond interface indicating the presence of inversion layer without gate voltage. The fixed negative charge model exhibits a strong inversion layer for normally-on FET operation, while the fixed positive charge model shows a weak inversion for normally-off operation. The maximum current density of a fixed positive interface charge model of the Al2O3/C-H diamond device is - 290 mA/mm, which corresponds to that of expermental result of Al2O3/SiO2/C-H diamond - 305 mA/mm at a gate-source voltage of - 40 V. Also, the threshold voltage Vth is relatively high at Vth = - 3.5 V, i.e., the positive charge model can reproduce the normally-off operation. Moreover, we also demonstrate that the Vth and transconductance gm correspond to those of the experimental work.

Normally-off C-H Diamond FETs with Partial Al/C-O Diamond Junction Attaining Low Off-State Current

Gate leakage suppression of normally-OFF diamond FET by employing MOS-MES hybrid gate structure

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

MOSFETs on (110) C–H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs with Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

Oxidized-silicon-terminated Diamond p-FETs with SiO 2 -fiNing Shallow Trench Isolation Structures

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Small Subthreshold Swing Diamond Field Effect Transistors with SnO2 Gate Dielectric

Normally-off trench JFET technology in 4H silicon carbide

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation