Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes

Cesur Altinkaya,Daisuke Iida,Kazuhiro Ohkawa

DOI: https://doi.org/10.1364/oe.522961

IF: 3.8

2024-06-12

Optics Express

Abstract:Cesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the ... [Opt. Express 32, 23245-23256 (2024)]

optics

What problem does this paper attempt to address?

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Changyu Shen,Huajun Feng,Zhihai Xu,Shangzhong Jin

DOI: https://doi.org/10.3788/col20080602.0152

IF: 2.56

2008-01-01

Chinese Optics Letters

Abstract:Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl 2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).
Optimal ITO Transparent Conductive Layers for InGaN-based Amber/red Light-Emitting Diodes

Zhe Zhuang,Daisuke Iida,Pavel Kirilenko,Martin Velazquez-Rizo,Kazuhiro Ohkawa

DOI: https://doi.org/10.1364/oe.389725

IF: 3.8

2020-01-01

Optics Express

Abstract:Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10-4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.
Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

Jin Xu,Wei Zhang,Meng Peng,Jiangnan Dai,Changqing Chen

DOI: https://doi.org/10.1364/OL.43.002684

2018-06-01

Abstract:The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1 Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.
Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Yiyun Zhang,Jing Li,Tongbo Wei,Jing Liu,Xiaoyan Yi,Guohong Wang,Futing Yi

DOI: https://doi.org/10.1143/jjap.51.020204

IF: 1.5

2012-01-01

Japanese Journal of Applied Physics

Abstract:In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced.
Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Yi Luo,Yiming Bai,Yanjun Han,Hongtao Li,Lai Wang,Jian Wang,Changzheng Sun,Zhibiao Hao,Bing Xiong

DOI: https://doi.org/10.1364/oe.24.00a797

IF: 3.8

2016-01-01

Optics Express

Abstract:Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.
Suppressing Degradation of ITO Electrode for Electroluminescence Device by Transparent MoO3 Barrier Layer

Yuan Wang,Sichen Lin,Houwei Pang,Yunfeng Wu,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1007/s10854-024-13332-7

2024-01-01

Journal of Materials Science Materials in Electronics

Abstract:The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO3 barrier into Er-doped npn devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO3 layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO3 layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.
Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

Munsik Oh,Mun Seok Jeong,Jaehee Cho,Hyunsoo Kim

DOI: https://doi.org/10.3390/ma17215385

IF: 3.4

2024-11-05

Materials

Abstract:We investigated hybrid functional transparent conductive electrodes (HFTCEs) composed of indium-tin-oxide (ITO) and silver nanowires (AgNWs) for the enhancement of output efficiency in GaN-based ultraviolet light-emitting diodes (UVLEDs). The HFTCEs demonstrated an optical transmittance of 69.5% at a wavelength of 380 nm and a sheet resistance of 16.4 Ω/sq, while the reference ITO TCE exhibited a transmittance of 76.4% and a sheet resistance of 18.7 Ω/sq. Despite the 8.9% lower optical transmittance, the UVLEDs fabricated with HFTCEs achieved a 25% increase in output efficiency compared to reference UVLEDs. This improvement is attributed to the HFTCE's twofold longer current spreading length under operating forward voltages, and more significantly, the enhanced out-coupling of localized surface plasmon (LSP) resonance with the trapped wave-guided light modes.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

Xiaomeng Fan,Shengrui Xu,Weiguo Liu,Hongchang Tao,Huake Su,Linlin Hu,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1016/j.rinp.2023.106714

IF: 4.565

2023-07-17

Results in Physics

Abstract:In this paper, a method of indium-tin oxide /Graphene /Indium-tin oxide (ITO/Gr/ITO) structure as transparent conductive layer (TCL) to improve the current spreading of ultraviolet light-emitting diodes (UV-LEDs) is reported. The ITO/Gr/ITO structure is obtained by RF magnetron sputtering and wet-transferred. Raman spectroscopy measurement further reveal that the number of inserted graphene in the structure are single layer and few layers. It can be found that the forward voltage of optimized LEDs with ITO/Gr/ITO TCL is significantly reduced. Furthermore, the light output power (LOP) and the wall plug efficiency (WPE) of the LEDs with ITO/Gr/ITO structure have also been improved significantly compared with that of the conventional LED with ITO TCL. Light distribution analysis shows that the introduction of ITO/Gr/ITO structure as TCL in UV-LEDs is an effective method to improve the current spreading. As a result, an LED with a 45.7% increase in LOP at 100 mA, and a 52% increase in maximum WPE is obtained by the use of ITO/Gr/ITO with a single graphene interlayer.

physics, multidisciplinary,materials science
The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

J. Lang,F. J. Xu,J. M. Wang,L. S. Zhang,Z. H. Sun,H. D. Zhang,X. Q. Guo,Z. Y. Zhang,C. Ji,F. Y. Tan,C. Z. Ji,X. N. Kang,X. L. Yang,N. Tang,Z. Z. Chen,X. Q. Wang,W. K. Ge,B. Shen

DOI: https://doi.org/10.1063/5.0216179

IF: 4

2024-07-01

Applied Physics Letters

Abstract:Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0–100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.

physics, applied
Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

WANG Wan-jing,LI Xi-feng,SHI Ji-feng,ZHANG Jian-hua

DOI: https://doi.org/10.3788/fgxb20123302.0210

2012-01-01

Abstract:Indium-Tin-Oxide(40 nm)/Ga-doped ZnO(140 nm)(ITO/GZO) and GZO(180 nm) films were deposited onto both glass substrates and p-GaN epitaxial layers by magnetron sputtering as transparent current spreading layer of GaN-based LEDs.After thermal annealing in air ambient conditions,the ITO/GZO films exhibite high transparency(~80%) in visible light and low resistivity(1.15×10-3 Ω·cm).The roughness of the ITO/GZO films is bigger than that of the GZO films which enhances the extraction of photons.The ITO interface modulation layer can reduce the contact barrier of GZO/p-GaN and improve the photoeletric performance of LEDs.GaN-based light-emitting diodes(LEDs) were also fabricated.With 20 mA injection current,it is found that the forward voltage are 6.8 V and 9.5 V,while the luminous intensity are 297 mcd and 245 mcd,respectively for the LEDs with ITO/GZO electrode and GZO electrode.Compared the LEDs with GZO electrodes,the luminous intensity of LEDs with ITO/GZO electrode increased by 20% at 20 mA forward current and increased by 50% at 35 mA forward current.
Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

Hong Wang,Quanbin Zhou,Siwei Liang,Rulian Wen

DOI: https://doi.org/10.3390/nano9010066

IF: 5.3

2019-01-05

Nanomaterials

Abstract:We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multilayer. The metal layer embedded into Ga2O3 and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga2O3/Ag/Ga2O3 multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10−3 Ω·cm2 with suitable annealing conditions.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Yizhou Qian,En-Lin Hsiang,Yu-Hsin Huang,Kuan-Heng Lin,Shin-Tson Wu

DOI: https://doi.org/10.3390/cryst14060503

IF: 2.7

2024-05-25

Crystals

Abstract:Micro-LEDs have found widespread applications in modular large-screen TVs, automotive displays, and high-resolution-density augmented reality glasses. However, these micron-sized LEDs experience a significant efficiency reduction due to the defects originating from the dry etching process. By controlling the current distribution via engineering the electrode size, electrons will be less concentrated in the defect region. In this work, we propose a blue InGaN/GaN compound parabolic concentrator micro-LED with a metallic sidewall to boost efficiency by combining both an optical dipole cloud model and electrical TCAD (Technology Computer-Aided Design) model. By merely modifying the p-GaN contact size, the external quantum efficiency (EQE) can be improved by 15.6%. By further optimizing the passivation layer thickness, the EQE can be boosted by 52.1%, which helps enhance the display brightness or lower power consumption.

materials science, multidisciplinary,crystallography
Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode

Kexi Liu,Ke Jiang,Bingxiang Wang,Xianjun Wang,Jianwei Ben,Shanli Zhang,Yang Chen,Yuping Jia,Mingrui Liu,Xiaojuan Sun,Dabing Li

DOI: https://doi.org/10.1364/ol.532520

IF: 3.6

2024-07-13

Optics Letters

Abstract:Kexi Liu, Ke Jiang, Bingxiang Wang, Xianjun Wang, Jianwei Ben, Shanli Zhang, Yang Chen, Yuping Jia, Mingrui Liu, Xiaojuan Sun, Dabing Li In this work, we propose a highly reflective Ni/Pt/Al p-electrode for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with ... [Opt. Lett. 49, 4030-4033 (2024)]

optics
Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

Bin Zhang,Zhiping Zhou,Nola Li,Ian T. Ferguson

DOI: https://doi.org/10.1117/12.760787

2007-01-01

Abstract:Light emitting diodes (LEDs) based on indium gallium nitride (InGaN) have been used widely in lighting applications and have shown great potential with high wall-plug efficiency and low manufacturing cost. However, one of the roadblocks in achieving higher light-extraction efficiency is total internal reflection, which prevents a majority of the photons from being extracted from the LEDs.The objective of this paper is to investigate measures for improving LED chip efficiency. Here, a high efficiency LED structure has been theoretically demonstrated using an infiltrated opal layer. A layer of indium-tin oxide (ITO) infiltrated opals was deposited on the surface of the LED chips as the light extraction layer in order to enhance the light extraction efficiency. Opals of similar radius periodically arranged on the structure will work as a rough surface. By enhancing the light extraction angle, the spontaneous emission from the active region can be emitted vertically. At the same time, opals with different radius and different refractive indexes are also studied. ITO, as the infiltration, is used to provide good lateral current spreading.The plane wave expansion (PWE), finite difference time domain,(FDTD), and rigorous coupled wave analysis (RCWA) methods are used to calculate the energy band structures and the extraction efficiency of the infiltrated opals layer. The scanning method and the Monte Carlo method are employed to optimize the structural parameters of the infiltrated opal layer. The infiltrated opals layer on the LED shows a high light extraction efficiency of over 60%.
Simulation of Nanoscale ITO Top Grating of GaN LED

Gabriel Halpin,Xiaomin Jin,Greg Chavoor,Xing-Xing Fu,Xiang-Ning Kang,Guo-Yi Zhang

DOI: https://doi.org/10.1117/12.2001071

2013-01-01

Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.
Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Jun Wang,Tian Wang

DOI: https://doi.org/10.1155/2024/8283945

2024-09-02

International Journal of Optics

Abstract:In this study, we propose a novel p‐i‐n AlGaN electron‐blocking layer for GaN‐based LEDs. The aim is to enhance the confinement of electrons and improve the efficiency of hole injection, ultimately resulting in a significant enhancement in LED performance. Detailed simulations and analysis were conducted to compare the performances of GaN‐based LEDs with a conventional EBL and our proposed EBL. It was observed that our newly proposed p‐i‐n AlGaN EBL significantly outperforms the conventional EBL in terms of output power and efficiency across a wide range of injecting currents. These improvements can be attributed to the strong reverse electrostatic field induced by our proposed p‐i‐n AlGaN EBL, which not only enhances electron confinement but also improves hole injection efficiency.

optics
The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Han, Yanjun,Zhongtao Liu,Luo, Yi,Ma Hongxia,XianPeng Zhang,Lai Wang

DOI: https://doi.org/10.1109/INOW.2007.4302897

2007-01-01

Abstract:By epitaxy of a thin p-lnGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.
Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Meng Liang,Xiao-Yan Yi,Zhi-Qiang Liu,Bing Wang,Qin-Feng Kong,Jun-Xi Wang,Jin-Min Li

2014-01-01

Abstract:In this work, a metal stack of Ni/Ag/Pt/Au with a 1nm-thick ITO (indium-tin-oxide) interlayer which formed highly reflective and ohmic contacts to p-GaN had been investigated. A strong interdiffusion of Ni/Ag/Pt/Au was observed when annealing over 500 degrees C for forming ohmic contact. As a result, the reflectance of Ni/Ag/Pt/Au contacts drastically decreased. A thin ITO layer grown between Ni/Ag/Pt/Au and p-GaN could lower the annealing temperature. And an optical reflectivity of 84% at 460nm was obtained after thermal annealing at 300 degrees C, while the specific contact resistance of ITO-Ni/Ag/Pt/Au contacts was found to be 2.16 x 10(-5) Omega . cm(2). In addition, the flip chip LEDs (light emitting diodes) fabricated with the ITO-Ni/Ag/Pt/Au contacts had a low voltage of 2.9V at 31A/cm(2).
Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Feng Feng,Yibo Liu,Ke Zhang,Mengyuan Zhanghu,Ka-Wah Chan,Ke Xu,Hoi-Sing Kwok,Zhaojun Liu

DOI: https://doi.org/10.1063/5.0123409

IF: 4

2023-04-02

Applied Physics Letters

Abstract:Ultraviolet band C (UV-C) micro light-emitting diodes (micro-LEDs) provide a high energy light emission of 200–280 nm, which are brilliantly utilized in optogenetics, communications, and fluorescence. However, the limited device efficiency notably restricts the grand potential application field. In this work, three types of 20 × 20 μ m 2 UV-C micro-LEDs with the peak wavelength of 269 nm are fabricated by different etching strategies, including an inductively coupled plasma (ICP), post-ICP tetramethylammonium hydroxide, and a hybrid scheme combining plasma and chemical treatment. By enhancing the radiative recombination and light extraction, the hybrid scheme improves the peak external quantum efficiency of UV-C micro-LEDs to 3.45%, an elevation of 57.5% compared with ICP. A step advance in the forward injection current and ideality factor is also found on the devices fabricated by the hybrid scheme due to better contact on the AlGaN surface.

physics, applied
Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective N-Type Electrode Made of Cr/Al

Yang Gao,Qian Chen,Shuang Zhang,Hanling Long,Jiangnan Dai,Haiding Sun,Changqing Chen

DOI: https://doi.org/10.1109/ted.2019.2914487

2019-01-01

Abstract:Mercury-free semiconductor deep ultraviolet light-emitting diodes (DUV-LEDs) still suffer from low power efficiencies due to extremely poor light extraction efficiency. In this paper, a high-reflective electrode is proposed and carefully optimized for making an ohmic contact with the n-type AIGaN layer in the DUV-LEDs (similar to 280 nm). The electrode is made of Cr/120-nm Al metal stack with a different thickness of the Cr layer in a range of 1-20 nm followed by the complete LED fabrication process. We found that the DUV-LED with a 1-nm Cr/120-nm Al electrode obtains maximum light output power and the highest external quantum efficiency, showing an enhancement factor of 40.9% and 25.4%, respectively, in comparison to a conventional LED with an electrode made of 20-nm Cr/120-nm Al. This enhancement is mainly attributed to a higher UV reflectivity of the 1-nm Cr/120-nm Al electrode. Furthermore, a better ohmic contact was achieved in such electrode due to the formation of higher quality Al-Cr and Cr-N alloys in such metal/n-AlGaN junction.

Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Optimal ITO Transparent Conductive Layers for InGaN-based Amber/red Light-Emitting Diodes

Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Suppressing Degradation of ITO Electrode for Electroluminescence Device by Transparent MoO3 Barrier Layer

Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode

Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

Simulation of Nanoscale ITO Top Grating of GaN LED

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective N-Type Electrode Made of Cr/Al