Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.

Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

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Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

Optimal ITO Transparent Conductive Layers for InGaN-based Amber/red Light-Emitting Diodes

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Light Extraction Efficiency Enhancement of GaN-based Light Emitting Diodes by a ZnO Current Spreading Layer

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Simulation of Nanoscale ITO Top Grating of GaN LED