Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications
Nuno E. Silva,Ampattu R. Jayakrishnan,Adrian Kaim,Katarzyna Gwozdz,Leonardo Domingues,J. S. Kim,Marian C. Istrate,Corneliu Ghica,Mario Pereira,Luís Marques,M. J. M. Gomes,Robert L. Z. Hoye,Judith L. MacManus‐Driscoll,José P. B. Silva
DOI: https://doi.org/10.1002/adfm.202416979
IF: 19
2024-11-11
Advanced Functional Materials
Abstract:Ferroelectric ZrO2 films grown by sputtering on Si, show strong near‐infrared (NIR) detection capability. The performance is shown to arise from the pyroelectric effect, combined with the ferroelectric effect in ZrO2, and the photovoltaic effect in Si. Overall, a simple CMOS‐compatible device is created for self‐powered NIR photodetectors with a performance comparable to Si commercial photodetectors but without the severe operational limitations of Si. Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems, sensing in IoT electronics, facial recognition, health monitoring, optical communication networks, night vision, and biomedical imaging. However, silicon commercial detectors need external power to operate and cooling to suppress large dark currents. This work demonstrates a new class of CMOS‐compatible self‐powered NIR photodetector based on ferroelectric 5‐nm thick ZrO2 films which do not require cooling and therefore have two key advantages over Si, and at the same time have comparable performance metrics. At room‐temperature, under 940 nm wavelength illumination (1.4 mW cm−2 power density, 10 Hz repetition rate), and without any power applied, fast rise and fall times of ≈2 and 4 μs, respectively, are achieved in Al/Si/SiOx/ZrO2/ITO devices, along with responsivity, detectivity and sensitivity values of up to ≈3.4 A W−1, 1.2 × 1010 Jones and 4.2 × 103, respectively, far exceeding all other emerging self‐powered systems. Furthermore, dual‐band NIR detection is shown for different NIR wavelengths, proof‐of‐concept feasibility being demonstrated for the smart identification of NIR targets. Therefore, it is demonstrated, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect, and the ferroelectric effect is a novel method to significantly enhance the performance of CMOS‐compatible ZrO2‐based self‐powered photodetectors in the NIR region.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology