Abstract:Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emission remain challenging despite their importance for many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs has an ideal band gap covering spectral regime from near infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications. Here, we report the engineering of InAs nanowire arrays to achieve efficient photodetection for wavelengths from NIR to MIR (3500 nm). By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve WZ-based InAs nanowire arrays with a high WZ density of ~ 67%. Due to the n-type background doping of the InAs nanowires and the p-type InAs substrate used for nanowire growth, a p-n junction is formed, and an ultrawide room-temperature photoresponse ranging from 500 to 3500 nm was obtained under zero bias. It is found that the waveguide modes supported by the InAs nanowires result in a high peak responsivity of 0.44 A/W and detectivity of 1.25×1010 cm√Hz/W at a wavelength of 1600 nm, at a bias voltage of only -0.1 V and relatively high operating temperature of 150 K. Such a strong light trapping effect in the InAs nanowires also leads to a significantly lower reflection compared to that observed in planar photodetectors, and thus a strong absorption in the substrate extending the photoresponse up to the InAs bandgap edge of 3500 nm. Our work shows that through careful material optimisation and device design, InAs nanowire arrays are promising for the development of high-performance ultra-broadband infrared photodetectors from NIR, SWIR to MWIR.

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