Abstract:Fan-out Wafer-level Packaging (FOWLP) urgently demands low dielectric constant and dissipation factor interlayer dielectric materials to mitigate high transmission loss at high frequencies. Polyimides (PIs) are widely used as interlayer dielectric materials in FOWLP for their excellent comprehensive properties. However, addressing the challenge of decreasing the dielectric constant and dissipation factor of PIs at high frequencies to meet the application requirements remains an active pursuit in both industry and academia. In this study, we designed and synthesized a novel diamine monomer featuring bis(trifluoromethyl) pendant groups, denoted as 4,4'-((3',5'-bis (trifluoromethyl)-[1,1'-biphenyl]-3,5-diyl)bis(oxy))dianiline (HFBODA). The binary polymerization of this diamine monomer with common dianhydrides led to promising outcomes. Remarkably, 6FDA-HFBODA exhibited excellent properties among the prepared PIs (Td,5% =521°C, Tg = 240°C, Dk = 2.63 and Df = 3.72×10-3 @ 10 GHz. Additionally, BPADA-HFBODA demonstrated an ultra-low Df value of 2.30×10-3 @ 10 GHz. The relationship between the charge density of imide in PIs and the dissipation factor of PIs was investigated for the first time. By introducing strong electron-withdrawing groups to the side group of PI, the effect of imide ring on orientation polarization was greatly declined, thus the dissipation factor of PI at high frequency was significantly decreased. Besides, the relationship between the structures and other essential properties of PIs in this study was systematically explored. This work provided a novel diamine and demonstrated the role of trifluoromethyl located in side group in lowering dissipation factors of PIs at high frequencies. The introduction of bis(trifluoromethyl) pendant group led to a reduction in polarizability and an increase in free volume within the PIs. Moreover, the electron-withdrawing effect of trifluoromethyl group substantially minimized the probability of internal friction among dipoles, resulting in reduced dielectric constants and dissipation factors. These findings provided crucial insights and guidance for the future design and research of low dielectric constant and dissipation factor PIs, particularly for high-frequency applications in Fan-out Wafer-level Packaging.

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