Synthesis and properties of PI composite films using carbon quantum dots as fillers

Yuyin Zhang,Hongtao Guo,Shaohua Jiang,Zhaoyu Hu,Guojun Zha,Kunming Liu,Haoqing Hou

DOI: https://doi.org/10.1515/epoly-2022-0054

2022-01-01

e-Polymers

Abstract:Abstract Polyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/CQDs) composite films with low dielectric loss were prepared by introducing CQDs into PI matrix. At 25°C and 1 kHz voltage, the dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQDs composite film is about 0.0018, which is about 68% lower than that of pure PI film. The dielectric loss of PI/CQD composite film is greatly reduced while the mechanical properties and thermal properties of PI/CQDs composite film roughly remain unchanged. Due to the cross-linking structure formed between CQDs and PI molecular chain, the relative movement of PI molecular chain is hindered.

polymer science

What problem does this paper attempt to address?

This paper aims to solve the problem that polyimide (PI) films need to have low dielectric loss in the development of electronic information technology. Specifically, with the development of electronic information technology, PI, as an insulating material, needs to have the characteristic of low dielectric loss. However, the dielectric loss of pure PI films is relatively high, approximately 0.0057. To improve this performance, the author prepared PI/CQDs composite films by introducing carbon quantum dots (CQDs), hoping to reduce the dielectric loss while maintaining or improving the mechanical and thermal properties.

The experimental results show that when the CQDs content is 4%, the dielectric loss of the PI/CQDs composite film is reduced to approximately 0.0018, which is about 68% lower than that of the pure PI film, while its mechanical and thermal properties remain basically unchanged. In addition, due to the cross - linking structure formed between CQDs and PI molecular chains, the relative movement of PI molecular chains is restricted, further reducing the dielectric loss.

Therefore, the main goal of this research is to prepare PI composite films with low dielectric loss by adding CQDs to meet the requirements of electronic information technology for high - performance insulating materials.