Tailored Ultralow Dielectric Permittivity in High-Performance Fluorinated Polyimide Films by Adjusting Nanoporous Characterisitics

Jun-Wei Zha,Hong-Juan Jia,Hai-Yan Wang,Zhi-Min Dang
DOI: https://doi.org/10.1021/jp305286r
2012-01-01
Abstract:To acquire advanced nanoporous fluorinated polyimide (F PI) films with low dielectric permittivity applied in microelectronic fields, as a feasible tactic, the SiO2/F-PI nanohybrid films were first synthesized to employ an in situ polymerization process by controlling the dispersion of SiO2 nanoparticles in polymer and the chemical reaction of monomers composed of F PI. Then, the removal of SiO2 nanoparticles from the SiO2/F-PI nanohybrid films by HF acid etching gives rise to the amount of nanopores with a diameter of about 40 nm in the porous F-PI films, which can be confirmed by observing TEM image results. The relationship between the microstructure of the nanoporous F-PI films and the properties, including relative dielectric permittivity, thermal stability, contact angles, and mechanical strength, was discovered. The relative dielectric permittivity of the nanoporous F-PI films was decreased to 2.45 while the films still displayed good mechanical properties and thermal stability. So this type of advanced nanoporous F-PI films brings a very potential application as alternative dielectric layers in the future microelectronic technology.
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