Abstract:The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 {\mu}m \times 200 {\mu}m. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV photons/XFEL-pulse), a fast read-out and radiation tolerance up to doses of 1 GGy of 12 keV X-rays for 3 years of operation. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the SiO2 layer and interface traps at the Si-SiO2 interface will build up. As function of the 12 keV X-ray dose the microscopic defects in test structures and the macro- scopic electrical properties of segmented sensors have been investigated. From the test structures the oxide charge density, the density of interface traps and their properties as function of dose have been determined. It is found that both saturate (and even decrease) for doses above a few MGy. For segmented sensors surface damage introduced by the X-rays increases the full depletion voltage, the surface leakage current and the inter-pixel capacitance. In addition an electron accumulation layer forms at the Si-SiO2 interface which increases with dose and decreases with applied voltage. Using TCAD simulations with the dose dependent damage parameters obtained from the test struc- tures the results of the measurements can be reproduced. This allows the optimization of the sensor design for the XFEL requirements.

Comparing single‐shot damage thresholds of boron carbide and silicon at the European XFEL

High Heat Flux Testing of B4C/Cu and SiC/Cu Functionally Graded Materials Simulated by Laser and Electron Beam

X-ray induced damage of B4C-coated bilayer materials under various irradiation conditions

Various damage mechanisms in carbon and silicon materials under femtosecond x-ray irradiation

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

The Influence of B4C Film Density on Damage Threshold Based on Monte Carlo Method for X-ray Mirror

Damage threshold measurements on EUV optics using focused radiation from a table-top laser produced plasma source

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Contrasting behavior of covalent and molecular carbon allotropes exposed to extreme ultraviolet and soft x-ray free-electron laser radiation

Comparison of theory, simulation, and experiment for dynamical extinction of relativistic electron beams diffracted through a si crystal membrane

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

High-velocity impact damage by projectile and tension after impact behavior at 1300 °C for SiC/SiC with environment barrier coating

Simulation Research on Fib Processing: A Comparison Between Silicon and Diamond

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Study of Surface Damage in Silicon by Irradiation with Focused Rubidium Ions

Characterization of Carbon-Contaminated B4C-Coated Optics after Chemically Selective Cleaning with Low-Pressure RF Plasma

Imaging of the boron doping in silicon using low energy SEM

Effect of the Surface Microstructure Ablated by Femtosecond Laser on the Bonding Strength of EBCs for SiC/SiC Composites

Challenges for silicon pixel sensors at the European XFEL

Thermal deformation of cryogenically cooled silicon crystals under intense X-ray beams: measurement and finite-element predictions of the surface shape

Control of the damage threshold of Si via a SiO2 coating upon irradiation with Mid-IR femtosecond laser pulses