Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Imaging of the boron doping in silicon using low energy SEM

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Monte Carlo Simulation of Dopant Contrast in Scanning Electron Microscope Image.

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Secondary Electron Imaging of Semiconductor Dopants with the Scanning Electron Microscope

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Differential Nonlinear Photocarrier Radiometry for Characterizing Ultra-Low Energy Boron Implantation in Silicon

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

SEM characterization of silicon nanostructures: can we meet the challenge?

Full field chemical imaging of buried native sub-oxide layers on doped silicon patterns

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si 1-x Ge x by ion implantation and subsequent nanosecond laser annealing

Mechanism of electron-beam manipulation of single dopant atoms in silicon

Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon