Abstract:Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross section of an encapsulated WSe2 layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe2 cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to reveal the spatial distribution of the atomic - scale electron orbital ionization cross - section in materials through the secondary - electron - induced - current imaging technique (SEEBIC) in scanning transmission electron microscopy (STEM). Specifically, the researchers hope: 1. **Explore the secondary - electron - emission mechanism at the atomic scale**: Traditional secondary - electron - emission theories are usually based on macroscopic material properties, such as the dielectric function, etc., and cannot accurately describe the emission behavior at the atomic scale. Therefore, the researchers hope to understand the differences in secondary - electron emissions at different lattice positions at the atomic scale through a combination of experiments and simulations. 2. **Explain the contrast differences observed in the experiments**: The experimental results show that the diselenide (Se - Se) lattice sites in the WSe₂ layer exhibit a higher secondary - electron - emission intensity than the tungsten (W) sites. This phenomenon is inconsistent with the results predicted by first - principles calculations, indicating that there may be complex interactions or structural changes inside the material that affect the ionization process of the electron orbit. 3. **Explore the changes in electron orbits in two - dimensional heterostructures**: By imaging WSe₂ encapsulated in multilayer materials, the researchers hope to capture the subtle changes in the probability distribution of electron orbits caused by the inter - layer interactions, thus providing a new perspective for understanding the electronic structure of two - dimensional materials. In summary, this research aims to directly image and analyze the spatial distribution of electron orbits using SEEBIC technology, reveal the secondary - electron - emission mechanism at the atomic scale, and explore the influence of inter - layer interactions on electron orbits. This not only helps to deepen the understanding of the electronic characteristics of two - dimensional materials but also provides an important reference for the development of more accurate material characterization methods in the future. ### Formula Explanation Some of the key formulas involved in this paper include: - **Secondary - electron - emission rate**: $\sigma(\mathbf{r})$, which represents the secondary - electron - emission rate at the position $\mathbf{r}$. - **Total ionization cross - section**: $\sigma_{\text{ion}}(E)$, which represents the total ionization cross - section when the incident - electron energy is $E$. - **Time - dependent density - functional theory (TD - DFT)**: It is used to simulate the electron - dynamics process and calculate the ionization rates at different positions. These formulas and models help the researchers theoretically explain the experimental results and provide a theoretical basis for further research.

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