Abstract:Electron microscopy has been revolutionized by the advent of the aberration corrector and advances in detector both for imaging and spectroscopy. Aberration correction dramatically improved spatial resolution into the sub-ångstrom regime, while new detectors have unlocked information about materials that was previously only imaginable.While these recent advances have proven essential to the atomic scale characterization of materials, many measurements have remained largely semi-quantitative. In particular, accuracy and precision for scanning transmission electron microscopy (STEM) was significantly hampered by the presence of sample drift and scan distortion. Until recently, this limitation has obscured the capabilities to characterize minute changes to the atomic structure that can ultimately define material properties. In this talk, we will introduce revolving scanning transmission electron microscopy (RevSTEM) for the characterization of semiconductors. The method uses a series of fast-acquisition STEM images, but with the scan coordinates rotated between successive frames. This scan rotation introduces a concomitant change in image distortion that is then used to analyze the sample drift rate and direction. Multiple case studies will be presented to demonstrate the power of this technique to characterize electronic materials. For example, we will show how picometer level precision and accuracy enabled the capability to directly quantify ferroelectric HfO2 thin films. We will also show how RevSTEM images can be used to accurately determine crystallographic parameters in real-space, and to determine the structural origins of polarization. When combined with modern spectroscopy tools, the technique can directly inform growth mechanisms in AlN based materials for fabrication of quantum well structures. Specifically, We will show the interface quality between various AlGaN/AlN quantum wells using a combination of high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS). We will show that we can directly measure the lattice parameters for each layer and how they vary across each AlN/AlGaN interface. Using EDS, we correlate the lattice parameters and lattice parameter values to the chemical composition in each layer. We show that throughout multiple quantum well structures, there is an asymmetrical interface with a diffusion of Ga on one side of the AlGaN layer. Further, we will discuss fluctuation in the composition present throughout each layer and the role on the local strain distribution.

Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope

Direct imaging of electron density with a scanning transmission electron microscope

Electron beam-induced current imaging with two-angstrom resolution

Electron Transfer/Ion Transfer Mode of Scanning Electrochemical Microscopy (secm): A New Tool for Imaging and Kinetic Studies

Atomic Imaging Using Secondary Electrons in a Scanning Transmission Electron Microscope : Experimental Observations and Possible Mechanisms

Secondary-electron imaging of bulk crystalline specimens in an aberration corrected STEM

Simulation Study of the Atomic Resolution Secondary Electron Imaging

Imaging lattice reconstruction in homobilayers and heterobilayers of transition metal dichalcogenides

Quantitative material analysis using secondary electron energy spectromicroscopy

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).

Secondary Electron Imaging of Semiconductor Dopants with the Scanning Electron Microscope

Simultaneous secondary electron microscopy in the scanning transmission electron microscope with applications for in situ studies

DFT‐Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe2 by Differential Phase Contrast Imaging

Scanning Acousto‐Optoelectric Spectroscopy on a Transition Metal Dichalcogenide Monolayer

DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe$_2$ by Differential Phase Contrast Imaging

Direct Optical-Structure Correlation in Atomically Thin Dichalcogenides and Heterostructures

Image simulation for atomic resolution secondary electron image.

Piezoelectricity of atomically thin WSe2 via laterally excited scanning probe microscopy

Quantifying the Structure and Chemistry of Semiconductor Devices with the Latest Advancements in Scanning Transmission Electron Microscopy

Application of High Spatial Resolution Scanning Work Function Spectroscopy to Semiconductor Surfaces and Interfaces