Abstract:Electron microscopy has been revolutionized by the advent of the aberration corrector and advances in detector both for imaging and spectroscopy. Aberration correction dramatically improved spatial resolution into the sub-ångstrom regime, while new detectors have unlocked information about materials that was previously only imaginable.While these recent advances have proven essential to the atomic scale characterization of materials, many measurements have remained largely semi-quantitative. In particular, accuracy and precision for scanning transmission electron microscopy (STEM) was significantly hampered by the presence of sample drift and scan distortion. Until recently, this limitation has obscured the capabilities to characterize minute changes to the atomic structure that can ultimately define material properties. In this talk, we will introduce revolving scanning transmission electron microscopy (RevSTEM) for the characterization of semiconductors. The method uses a series of fast-acquisition STEM images, but with the scan coordinates rotated between successive frames. This scan rotation introduces a concomitant change in image distortion that is then used to analyze the sample drift rate and direction. Multiple case studies will be presented to demonstrate the power of this technique to characterize electronic materials. For example, we will show how picometer level precision and accuracy enabled the capability to directly quantify ferroelectric HfO2 thin films. We will also show how RevSTEM images can be used to accurately determine crystallographic parameters in real-space, and to determine the structural origins of polarization. When combined with modern spectroscopy tools, the technique can directly inform growth mechanisms in AlN based materials for fabrication of quantum well structures. Specifically, We will show the interface quality between various AlGaN/AlN quantum wells using a combination of high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS). We will show that we can directly measure the lattice parameters for each layer and how they vary across each AlN/AlGaN interface. Using EDS, we correlate the lattice parameters and lattice parameter values to the chemical composition in each layer. We show that throughout multiple quantum well structures, there is an asymmetrical interface with a diffusion of Ga on one side of the AlGaN layer. Further, we will discuss fluctuation in the composition present throughout each layer and the role on the local strain distribution.

Secondary-electron imaging of bulk crystalline specimens in an aberration corrected STEM

Image simulation for atomic resolution secondary electron image.

Atomic Imaging Using Secondary Electrons in a Scanning Transmission Electron Microscope : Experimental Observations and Possible Mechanisms

Simultaneous secondary electron microscopy in the scanning transmission electron microscope with applications for in situ studies

Simulation Study of the Atomic Resolution Secondary Electron Imaging

Seeing into Materials with Aberration-corrected STEM and First-Principles Theory

Tracking Atoms, Vacancies and Electrons via Aberration-corrected Microscopy and First-Principles Theory

Progress and Prospects of Aberration-Corrected STEM for Functional Materials.

Aberration-Corrected Scanning Transmission Electron Microscopy: from Atomic Imaging and Analysis to Solving Energy Problems

Direct imaging of electron density with a scanning transmission electron microscope

Low-voltage single-atom electron microscopy with carbon-based nanomaterials

Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope

Quantifying the Structure and Chemistry of Semiconductor Devices with the Latest Advancements in Scanning Transmission Electron Microscopy

Three-dimensional crystal defect imaging by STEM depth sectioning

Aberration corrected STEM and EELS: Atomic scale chemical mapping

Towards construction of a novel nm resolution MeV-STEM for imaging of thick biological samples

Quantitative material analysis using secondary electron energy spectromicroscopy

Material structure, properties, and dynamics through scanning transmission electron microscopy

Electron beam-induced current imaging with two-angstrom resolution

Towards Construction of a Novel Nanometer-Resolution MeV-STEM for Imaging Thick Frozen Biological Samples

Precision controlled atomic resolution scanning transmission electron microscopy using spiral scan pathways