Abstract:Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.

The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Doping silicon nanocrystals with boron and phosphorus

Efficient 1.3-Mu M Electroluminescence From High Concentration Boron-Diffused Silicon P(+)-N Junctions

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon