Abstract:Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p(+)-n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B(+)-B(-), with negative correlation energy which are identified using the ESR technique in the nanoscale silicon p(+)-n junctions heavily doped with boron. The model of the recombination process though the negative-U dipole boron centers controlling the optical properties of the nanoscale silicon p(+)-n junctions is proposed.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: to explore the influence of high - concentration boron doping on the near - infrared electroluminescence (EL) of nano - scale silicon p+-n junctions, especially how the existence of boron dipole centers affects the optical properties of these devices. Specifically, the research focuses on the following aspects: 1. **Influence of high - concentration boron doping**: - The boron concentration is as high as \(5\times10^{21}\, \text{cm}^{-3}\), much higher than the critical concentration of the Mott transition. Theoretically, it should lead to metallic - like conductivity, but what is observed in the experiment is a two - dimensional hole gas with high mobility. 2. **Linear polarization characteristics of electroluminescence**: - It is found that the electroluminescence has a high degree of linear polarization in the near - infrared region, and the polarization direction is distributed along specific crystallographic axes. - This polarization characteristic can be regulated by applying a transverse voltage. 3. **Temperature dependence**: - The change of electroluminescence intensity with temperature has been studied and is attributed to the existence of self - compensating boron dipole centers (B\(^+\)-B\(^-\)), which have negative correlation energy. 4. **Model proposal**: - A recombination process model for controlling the optical properties of nano - scale silicon p+-n junctions through negative - U boron dipole centers has been proposed. ### Summary of key issues - **Why does high - concentration boron doping not lead to metallization?** - Experiments show that although the boron concentration is high, there is still a two - dimensional hole gas with high mobility in the p - type silicon quantum well, which is inconsistent with the expected metallization behavior. - **How is the linear polarization of electroluminescence generated?** - The research finds that the boron dipole centers are arranged along the <111> crystallographic axis, resulting in a high degree of linear polarization of electroluminescence, and this polarization can be regulated by a transverse voltage. - **What is the influence of temperature on electroluminescence?** - An increase in temperature will lead to changes in the electroluminescence intensity and degree of polarization, which are related to the recombination process of negative - U boron dipole centers. Through the research of these problems, the paper reveals the profound influence of high - concentration boron doping on the electroluminescence characteristics of nano - scale silicon p+-n junctions and proposes a reasonable physical mechanism to explain these phenomena.

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