Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.

Efficient 1.3-Mu M Electroluminescence From High Concentration Boron-Diffused Silicon P(+)-N Junctions

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Controllable Design of Minority Carrier Diffusion in Npn Devices for Enhancing Er3+-Related Electroluminescence

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions

1530-nm electroluminescence from <i>p</i>-Ga<sub>2</sub>S<sub>3</sub>:Er/<i>n<SUP>+</SUP></i>-Si heterojunctions induced by Zener tunneling

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

1.54 Mu M Er3+ Electroluminescence from an Erbium-Compound-Doped Organic Light Emitting Diode with A P-Type Silicon Anode

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Silicon Light Emissions from Boron Implant-Induced Extended Defects