1.54 Mu M Er3+ Electroluminescence from an Erbium-Compound-Doped Organic Light Emitting Diode with A P-Type Silicon Anode

W. Q. Zhao,P. F. Wang,G. Z. Ran,G. L. Ma,B. R. Zhang,W. M. Liu,S. K. Wu,L. Dai,G. G. Qin
DOI: https://doi.org/10.1088/0022-3727/39/13/013
2006-01-01
Abstract:By doping an erbium complex, erbium (III) 2,4-pentanedionate (Er(acac)(3)), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO2/NPB/ALQ/ALQ:Er(acac)(3)/ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 mu m emission from Er3+ is observed. The impact of doping level of Er(acac)(3) in ALQ on 1.54 mu m electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac)(3) to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac)(3) is found and the Er3+ ions excitations are attributed to energy transfer from the ligands to Er ions.
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