Abstract:Advanced packaging is gradually becoming an important means to continue Moore’s law and thus support the development of the integrated circuits field. However, the fabrication of high aspect ratio Through -Silicon-Via (TSV) has been a challenge that restricts the high-density 3D integration of chips. In this paper, we propose a new method of high aspect ratio TSV fully filled copper based on the combination of high cavity physical vapor deposition (PVD) and electroplating. SiO2 films were first deposited as insulating layers using atomic layer deposition (ALD), and the results showed that the prepared SiO2 films had low surface roughness. Then, high-cavity physical vapor deposition was used to sputter Ti and Cu as the barrier and seed layers, respectively, and the films were continuous and dense even at the bottom of the TSV. Finally, the TSV with a diameter of 3 μm and aspect ratio of 15:1 was filled without any holes or cracks using electroplating technology. This study greatly improves the problems of poor homogeneity, difficulty in industrialization, and high cost associated with the preparation of seed layers using the chemical plating method reported in the current literature, and provides a solution for the large-scale mass production of high aspect ratio TSV.

TSV side wall flattening method

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Plastic analysis for through silicon via with actual etching defect of triangular-teeth and scallops.

Etching Scallop-Less Nano-Tsv with F/O Coupling Plasma

A Wet Process to Fabricate Silicon Oxide Layer for Through-Silicon-via Insulator Application

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Advanced TSV Filling Method with Sn Alloy and Its Reliability

Study of a through-silicon/substrate via filling method based on the combinative effect of capillary action and liquid bridge rupture

Effective Approach for TSV Cu Plating Gap Fill Improvement

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Research of Vertical via Based on Silicon, Ceramic and Glass

Barrier and Seed Layers Deposition in TSV Using Magnetron Sputtering

Research of an integrated fabrication process of barrier layer and seed layer used in through silicon via