Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

High-Performance PVDF-HFP Based Gel Polymer Electrolyte Modified by Core-Shell SiO2-PMMA for Electrochromic Devices

The Effect of Annealing Treatment on Performance of Interdiffused Organic Photovoltaic Devices

Post-Fabrication Annealing Effects in Polymer-Nanotube Photovoltaic Cells

Schottky Barrier Modulation in Surface Nanoroughened Silicon Nanomembranes for High-Performance Optoelectronics.

Investigation of Annealing Effects on Microstructure of Hybrid Nanocrystal–polymer Solar Cells by Impedance Spectroscopy

Enhancing Si-nanowire solar cell performance through fabrication and annealing optimization

Improvement of Surface Morphology of Thin ?lms and Performance by "electrical Annealing" on Polymer Solar Cells

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Enhanced electrical parameters of the Au/n-Si schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Effect of PTAA and PCBM concentrations on the electrical response of bilayer heterojunction PTAA/PCBM Diode

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes

Electrical Properties of PolySiGe Grown by Metal-Induced Growth