Physical investigations of vanadium oxide thin films on p-Si substrate

Pakma, O.
DOI: https://doi.org/10.1007/s10854-022-08519-9
2022-06-11
Abstract:In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol–gel method using V 2 O 5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated by XRD, SEM, AFM, and EDX analysis, respectively. Metal–oxide–semiconductor (MOS) structures were fabricated on the p-Si wafer and the electrical properties of those were obtained from current–voltage ( I - V ) and capacitance–voltage ( C – V ) measurements. As a result of XRD analysis, V 8 O 15 and V 3 O 7 structure peaks were observed in the films. The frequency and voltage-dependent capacitance measurements for MOS structures showed that the capacitance decreased with increasing frequency. The main electrical parameters for instance diode ideality factor ( n ), barrier height ( Φ B ), series resistance ( R S ) of the MOS structure were determined from the current–voltage ( I – V ) characteristics and compared in detail with thermionic emission theory, Norde and Cheung methods.
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