P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition

Subaru Nakanishi,Yoshiharu Shinozaki,Satoru Kaneko,Akifumi Matsuda,Mamoru Yoshimoto
DOI: https://doi.org/10.35848/1347-4065/ab9ef7
IF: 1.5
2020-07-01
Japanese Journal of Applied Physics
Abstract:Amorphous vanadium oxide (V x O y ) thin films were grown on SiO 2 glass substrates by pulsed laserdeposition at RT in high vacuum of 1.0 × 10 −5 Pa. The electric conductivity of the film wasincreased from 0.34 S cm −1 at 323 K to 4.2 S cm −1 at 473 K, and the film showed positive Seebeckcoefficient of15 μ V K −1 at 323 K and positive Hall voltage of10 μ V at RT, indicating p-typesemiconductor. From ex situ X-ray photoelectron spectroscopy analysis, p-type amorphous V x O y thinfilms seemed to contain minor V 4+ ions with a V 4+ /V 5+ ratio of at least 0.2 at the surface.
physics, applied
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