Room-temperature synthesized amorphous P-type transparent Ga2O3-Cu2S alloy thin films with tunable optoelectronic properties

Xiao Hu Lv,Zhan Hua Li,Yuan Shen Qi,Tooru Tanaka,Qi Xin Guo,Kin Man Yu,Chao Ping Liu

DOI: https://doi.org/10.1016/j.apsusc.2023.156341

IF: 6.7

2023-04-01

Applied Surface Science

Abstract:Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x<∼0.5 by magnetron sputtering at room temperature. The optoelectronic properties of these alloy thin films were investigated by a combination of analytical techniques. The optical bandgap shows a reduction from ∼4.8 eV to ∼2.5 eV with increasing x, while the hole concentration N increases from 1019 cm−3 (x=∼0.2) to ∼2 × 1021 cm−3 (x = ∼0.5), with their hole mobility μ ∼ 0.3 cm2 V−1 s−1. The hole transport in these amorphous alloys follows the variable-range-hopping mechanism in the temperature range of 120–300 K. We observe that the valence band maximum (VBM) position moves up rapidly by ∼3 eV with x > 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films