Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO

Hall Effect Studies of Doped Zinc Oxide Single Crystals

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Impurity-related defect complexes-mediated ferromagnetism and impurity band hopping conduction in a highly compensated Zn-doped SnO 2

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Thermoelectric Properties and Electronic Structure of Al-Doped Zno

Temperature-Dependent Exciton-Related Transition Energies Mediated by Carrier Concentrations in Unintentionally Al-Doped Zno Films

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Homobuffer Thickness Effect on the Conduction Type of Non-Polar ZnO Thin Films

Comparison of density functionals for nitrogen impurities in ZnO

Metal-semiconductor transition in epitaxial ZnO thin films

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers

Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Thermodynamical Analysis of Conductivity-Type Inversion in ZnO

Multi-Carrier Transport Properties in P-Type Zno Thin Films

Temperature-Dependent Hall and Photoluminescence Evidence for Conduction-Band Edge Shift Induced by Alloying Zno with Magnesium

The Evolution And Mechanisms Of Unintentional Doping In Zno Epitaxial Growth

Electron Transport in Znmgo/Zno Heterostructures