Abstract:Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al2O3) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al2O3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 104 and field effect mobility up to 1.5 cm2/V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

Solution-Processed Hybrid Ambipolar Thin-Film Transistors Fabricated at Low Temperature

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Low-temperature fabrication of high performance indium oxide thin film transistors

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Low Voltage Driven, Stable Solution-Processed Zinc-Tin-Oxide TFT with HfOy and AlOx Stack Gate Dielectric

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

High Carrier Mobility Low-Voltage ZnO Thin Film Transistors Fabricated at a Low Temperature Via Solution Processing

Solution Processed Organic Thin-Film Transistors with Hybrid Low/High Voltage Operation

Low-Temperature Rapid Preparation of High-Performance Indium Oxide Thin Films and Transistors Based on Solution Process

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

Low-Temperature Solution-Processed Bilayer Ingazno/In 2O 3 Thin Film Transistors Based on Lightwave Annealing

Fully Solution-Processed Sodium Doped Zno Thin-Film Transistors Via A Low-Temperature Aqueous Route

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor