Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors
Shiva Asapu,James Nicolas Pagaduan,Ye Zhuo,Taehwan Moon,Rivu Midya,Dawei Gao,Jungmin Lee,Qing Wu,Mark Barnell,Sabyasachi Ganguli,Reika Katsumata,Yong Chen,Qiangfei Xia,J. Joshua Yang
DOI: https://doi.org/10.3389/fmats.2022.969188
2022-08-25
Frontiers in Materials
Abstract:In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2P r ), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2P r with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2P r of ∼ 64 μ C cm −2 at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications.
materials science, multidisciplinary