Abstract:A study on anti-ferroelectric (PbLa)(ZrTi)O 3 (PLZT) for electric vehicles (EV) applicable to DC-link was conducted. Multilayer ceramic capacitors (MLCCs) for DC-link require high-electric field properties and reliability. Oxygen vacancies are a major cause affecting insulation properties and reliability. There are acceptors and donors as methods for controlling the mobility and concentration of oxygen vacancies. The mobility and concentration of oxygen vacancies were simultaneously controlled, rather than individually controlled. Mn 4+ was selected as the acceptor and Dy 3+ was selected as the donor. After fixing Mn 4+ = 5.0 mol% to (Pb 0.82 La 0.12 )(Zr 0.86 Ti 0.14 )O 3 , insulation properties and reliability were evaluated according to Dy 3+ = 5.0, 10.0, 15.0 and 20.0 mol%. A high sintered density was obtained at a temperature of 1200°C in a reduction atmosphere. When Mn 4+ = 5.0 mol% and Dy 3+ = 10.0 mol% were co-substituted into PLZT, a dielectric constant of about 1800 and a breakdown voltage of about 12 kV mm −1 were obtained. In the co-substituted PLZT, capacitance change and insulation degradation properties were greatly improved. Oxygen vacancy mobility and concentration control were effective in reliability properties. Thermally stimulated depolarization current (TSDC) was analysed to confirm the polarization of oxygen vacancies. TSDC increased with electric field and time. TSDC decreased in co-substituted PLZT compared to un-substituted PLZT. A factor affecting TSDC is the behaviour of oxygen vacancies. Based on the result, the oxygen vacancies are polarized and moved by the application of an electric field, resulting in degradation of insulating properties.

Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation

Effect of oxygen vacancies on dielectric property and reliability of anti-ferroelectric PLZT applicable to EV-MLCC

Interface-Oxygen-Loss-Controlled Voltage Offsets in Epitaxial Pb(Zr0.52ti0.48)O-3 Thin-Film Capacitors with La0.7sr0.3mno3 Electrodes

Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO3–0.2BiZn0.5Ti0.5O3

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Electrical and Optical Properties of Lanthanum-Modified Lead Zirconate Titanate Thin Films by Radio-Frequency Magnetron Sputtering

Hybrid Hartree-Fock Density Functional Study Of Charged Point Defects In Ferroelectric Pbtio3

Effect of Electrode Configurations on the Process-Induced Imprint Behavior of Epitaxial Pb(Zr0.52Ti0.48)O3 Capacitors

Defects Engineered Ferroelectricity and Electrocaloric Effect in Pb0.7Ba0.3ZrO3 Ceramics

Enhanced Fatigue and Retention Properties of Pb(Ta0.05Zr0.48Ti0.47)O3 Films Using La0.25Sr0.75CoO3 Top and Bottom Electrodes

Characteristics of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-delta Capacitors Fabricated on LaAlO3 and Y2O3-stabilized ZrO2 Substrates During Irradiation

Inhibition of Oxygen Vacancy Derived from Donor Doping in Relaxor Ferroelectric Films for Improving Dielectric Energy Storage

Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La[sub 0.7]Sr[sub 0.3]MnO[sub 3]/Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3]/La[sub 0.7]Sr[sub 0.3]MnO[sub 3] thin-film capacitors

Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La0.7Sr0.3MnO3/Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 thin-film capacitors

Enhanced energy-storage density and temperature stability of Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 anti-ferroelectric thin film capacitor

Mechanism of High Temperature Hydrogen Reduced Polarization Degradation in Pb(Zr1−xTix)O3 Ferroelectric Thin Film Capacitors

Effect of Lattice-Misfit Strain on the Process-Induced Imprint Behavior in Epitaxial Pb(Zr0.52Ti0.48)O3 Thin Films

Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors after γ-ray irradiation

Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors

Oxygen Vacancy-Related Dielectric Relaxation and Electrical Conductivity in La-doped Ba(Zr 0.9 Ti 0.1 )O 3 Ceramics

Top-interface-controlled fatigue of epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric thin films on La0.7Sr0.3MnO3 electrodes