Enhanced electric resistivity and dielectric energy storage by vacancy defect complex
Hao Pan,Nan Feng,Xing Xu,Weiwei Li,Qinghua Zhang,Shun Lan,Yi-Qian Liu,Haozhi Sha,Ke Bi,Ben Xu,Jing Ma,Lin Gu,Rong Yu,Yang Shen,Xiao Renshaw Wang,Judith L. MacManus-Driscoll,Chong-Lin Chen,Ce-Wen Nan,Yuan-Hua Lin
DOI: https://doi.org/10.1016/j.ensm.2021.08.027
IF: 20.4
2021-11-01
Energy Storage Materials
Abstract:The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress defects, a new approach, i.e., constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO3-based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen-pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm−3), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology