Abstract:In this work, synchrotron X‐ray diffraction, capacitance‐voltage measurements, and piezoresponse force microscopy imaging are used to examine the polarization wake‐up phenomenon that exists in ferroelectric capacitors with Hf0.5Zr0.5O2 (HZO) thin films. These measurements strongly demonstrate that polarization wake‐up results from a field‐induced phase change in the HZO films from an initially‐present tetragonal phase to the ferroelectric orthorhombic phase. As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO2‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as "wake‐up". In this study, the authors attempt to understand what causes the wake‐up effect in Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

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Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

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Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

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In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing