Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

300 mm wafer-level hybrid bonding for Cu/interlayer dielectric bonding in vacuum

Hybrid Bonding for Ultra-High-Density Interconnect

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Cu–Cu Bond Quality Enhancement Through the Inclusion of a Hermetic Seal for 3-D IC

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Room temperature direct Cu-Cu bonding with ultrafine pitch Cu pads

Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration

Thermal Finite Element Simulation of Ultrafine Pitch Chip-to-Wafer Hybrid Bonding

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

A Low-Temperature Hybrid Bonding Using Copper and Parylene for Heterogeneous Integration