Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Preparation of Silicon Nanowires and Porous Silicon Composite Structure by Electrocatalytic Metal Assisted Chemical Etching

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

Electrically conductive and optically active porous silicon nanowires.

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

OS1503 Development of Highly Ordered Silicon Nanowire Array

Extended Arrays of Vertically Aligned Sub-10 Nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Enhanced Photoluminescence from Porous Silicon Nanowire Arrays

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

Controllable Light-Induced Conic Structures in Silicon Nanowire Arrays by Metal-Assisted Chemical Etching.

Photoluminescence of a silicon quantum wire array fabricated by electrolytic etching

Ordered Arrays Of Vertically Aligned [110] Silicon Nanowires By Suppressing The Crystallographically Preferred Etching Directions

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration.

Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

Structure and electrical behavior of silicon nanowires prepared by MACE process

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching

Self-formed Silver Nanoparticles on Freestanding Silicon Nanowire Arrays Featuring SERS Performances