Abstract:Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

Photoluminescence of a silicon quantum wire array fabricated by electrolytic etching

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Silicon quantum wire array embedded in silicon dioxide

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal-Oxidation

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Optical Property Characterization of Silicon Quantum Wires

Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching

Sil−xGex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

Fabrication of silicon quantum wires by conventional silicon processing

Si1-Xgex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Direct Evidence of Quantum Confinement from the Size Dependence of the Photoluminescence of Silicon Quantum Wires

Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure

Long-persistent luminescence in near-ultraviolet from silicon nanowires

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

Band gap of a silicon quantum wire