Abstract:With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of physical vapor transport (PVT) growth, which is a critical step to obtain high quality SiC crystals with polytype stability and low dislocation density. This paper describes a study on dislocation behavior of large diameter 4H-SiC crystals at the early stages of PVT growth. Synchrotron x-ray topography is applied to 6-inch PVT-grown crystals with a thickness of several hundred microns on 4H-SiC seeds. Grazing-incidence topographs in (g = 11overline{2}8) and (g = 1overline{1}09) recorded from both the seed crystal and newly grown layer show the presence of screw-type basal plane dislocations (BPDs) with (b = 1/3left[ {11overline{2}0} ight]) at the inner region of the wafers, which is further confirmed by comparing with ray tracing simulated images of these dislocations. Their origins are likely from deflection of threading edge dislocations (TEDs) onto the basal plane by the overgrowth of macro-steps. Pairs of threading screw/mixed dislocations (TSDs/TMDs) are found to be newly generated at the initial growth stage and some are deflected onto the basal plane. A high density of newly generated TEDs is observed in the early-grown crystals, which are either nucleated in pairs at the seed/crystal interface or converted from BPDs in the seed crystal. Furthermore, dislocations with unique shapes are observed and found to be associated with deflection of TMDs and TEDs, which become the major source for BPD generation during the early PVT growth stage. Possible models to explain their formation mechanism are developed.

Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal