Abstract:A method is presented for calculating the reference intensity ratio of crystalline phases with unknown atomic arrangements using just the composition and lattice parameters.The reference intensity ratio (RIR) is the intensity ratio of a specified peak of the target crystalline phase to a certain peak of the reference phase in the powder X‐ray diffraction pattern of a mixture of the target and reference phases in a weight ratio of 1:1. The RIR represents the diffraction power of the target phase compared with that of the reference phase. A quantitative phase analysis (QPA) can be readily made on the basis of only a powder pattern when the RIR values of all component phases in the mixture are available. The RIR of a target phase can be measured experimentally or calculated in accordance with its crystal structure. RIR values are given in most powder diffraction files (PDFs) published by the International Centre for Diffraction Data, but there are still more than 110 000 PDFs for which the RIR is absent. Newly discovered phases may be present in a mixture as components of unknown weight fractions, for which the RIR values can be neither measured nor calculated with the currently available method. Herein is presented a new method of calculating the RIR of a crystalline phase from its lattice parameters, the chemical content of the unit cell and a list of normalized intensities of reflections over a sufficiently large diffraction angle range. The new method can be used to calculate not only the absent RIRs in the PDFs but also the RIR of a component phase of a mixture of unknown weight fraction when the lattice parameters and chemical content of the unit cell of the corresponding phase are known.

X-RAY POWDER DIFFRACTION RIETVELD METHOD IN-QUANTITATIVE DETERMINATION OF SiC POLYTYPES

Computer Simulation Of X-Ray Powder Diffraction Pattern

Characterizations on the Doping of Single-Crystal Silicon Carbide

Quantitative Determination of Phase Content of Silicon Nitride by X-Ray Diffraction Analysis.

A study on powder X-ray diffraction of Ti3SiC2

Analysis on preferred orientation and purity estimation of Ti3SiC2

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

[Study on Extracting Raman Spectra of Single Component and Structure from Impure Amorphous Spectra].

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

The Study of the Raman Spectra of Sic Layers in Triso Particles

Quantitative Phase Analysis by the Rietveld Method for Forensic Science.

Quantitative analysis of X-Ray diffraction spectra for determine structural properties and deformation energy of Al, Cu and Si

Quantitative Deviation of Nanocrystals Using the RIR Method in X-ray Diffraction (XRD)

Calculating the reference intensity ratio of crystalline phases with unknown atomic arrangements using the lattice parameters and chemical information

A Method for Quantitative Phase Analysis of Silicon Nitride by X-Ray Diffraction

Theoretical Study on the Vibrational Spectra and Potential Energy Curves for SiC (X3Π) and SiS (X1Σ+) Molecules

Direct Determination of Impurities in High Purity Silicon Carbide by Inductively Coupled Plasma Optical Emission Spectrometry Using Slurry Nebulization Technique

Structural Analysis of Interstratified Illite-Smectite by the Rietveld Method

Quantitative Phase Analysis by X-ray Diffraction—Doping Methods and Applications

Quantitative determination of the stability of SiC whisker in reaction-bonded/hot-pressed Si3N4 composites by X-ray diffraction

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice