Abstract:Computer simulation plays an instrumental role in modern tool material design. In this study, we have calculated the temperature and pressure conditions for the phase transition of Si3N4 from α to β using first principles. The simulation results show that the phase transition temperature is 1330 K at a phase transition pressure of 32 MPa. The modulus of elasticity, hardness, ductile/brittle properties (B/G), Poisson's ratio, elastic anisotropy, and phonon spectral curves at the phase transition point were also calculated for the material at temperatures ranging from 873 K to 2073 K. According to the phase transition conditions, the surface energies of β-Si3N4 and TiC interfaces were calculated, and 4-layer models of Si3N4/TiC interfaces were constructed. The total energy and adhesion work of the Si3N4(110)/TiC(100) interface were analyzed by molecular dynamics. The results show that the Si3N4(110)/TiC(100) interface exhibits the maximum total energy and adhesion work of 12,806.62 eV and 2.33 J/m2, respectively, indicating that the interface bond was the most stable. Furthermore, the mechanical properties of different interface models were calculated and compared. The effects of Si3N4(110)/TiC(100) interfacial 5-layer and 6-layer crystalline surfaces and Si and Ti vacancy defects on the mechanical properties of the interfacial model were further investigated. The Si3N4/TiC composite ceramic tool material was prepared experimentally based on the results of simulation, and the properties show reasonable agreement.

Analysis on preferred orientation and purity estimation of Ti3SiC2

A study on powder X-ray diffraction of Ti3SiC2

An X-ray diffraction study of the texture of Ti3SiC2 fabricated by hot pressing

A study on the orientation relationship between Ti3SiC2 and TiC grains

A study on the reaction mechanism and growth of Ti3SiC2 synthesized by hot-pressing

A study on formation of Ti3SiC2 synthesized by elemental powders

A Study on the Microtexture of Ti3sic2 Grains

Growth model and morphology of Ti3SiC2 grains

Synthesis and Mechanical Properties of In-Situ Hot-Pressed Ti3SiC2 Polycrystals

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Crystallography and diffraction patterns of the precipitates in Cu-3 wt% Ti alloy

Theoretical analysis of Si3N4/TiC interfacial properties and material preparation

Topology of charge density and elastic anisotropy of Ti 3 SiC 2 polymorphs

Topology of Charge Density and Elastic Anisotropy of Ti3SiC2polymorphs

Effects of texture orientation in Ti3SiC2 on growth kinetics of interfacial compound layers in diffusion bonded TiAl/Ti3SiC2 joints

Synthesis of High-Purity Ti3SiC2 Polycrystals by Hot-Pressing of the Elemental Powders

Orientation Relationship and Interfacial Structure Between Ζ-Ti5si3 Precipitates and Γ-Tial Intermetallics

Polymorphism of Ti3SiC2

Investigations of Microstructure and Electronic Structure of Ti3SiC2 and TiAl