Topology of charge density and elastic anisotropy of Ti 3 SiC 2 polymorphs

R. Yu,X. F. Zhang,L. L. He,H. Q. Ye
DOI: https://doi.org/10.1557/JMR.2005.0145
IF: 2.7
2005-01-01
Journal of Materials Research
Abstract:Using an all-electron, full potential first-principles method, we have investigated the topology of charge density and elastic anisotropy of Ti 3 SiC 2 polymorphs comparatively. By analyzing the charge density topology, it was found that the Ti-Si bonds are weaker in β than in β, resulting in a destabilizing effect and lower Young’s modulus in directions between a and c axes for β . On the other hand, the Si-C bonds (absent in α) are formed in β in the c direction. The formation of the Si-C bonds not only mitigates the destabilizing effect of the weaker Ti-Si bonds, but also results in larger Young’s modulus in the c direction. In contrast to the high elastic anisotrophy, the elastic anisotropy of Ti 3 SiC 2 is very low.
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