Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Anisotropic Transport in a Possible Quasi-One-dimensional Topological Candidate: TaNi2Te3

Anisotropic Transport and Quantum Oscillations in the Quasi-One-Dimensional TaNiTe5: Evidence for the Nontrivial Band Topology

Anisotropic Transport and Multiple Topology in Quasi-One-dimensional Ternary Telluride NbNiTe5

Superconductivity and Quantum Oscillations in Ternary Weyl Semimetal TaIrTe4

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Anisotropic Transport and De Haas–van Alphen Oscillations in Quasi-One-dimensional TaPtTe5

Enhanced Anisotropic Superconductivity in the Topological Nodal-Line Semimetal InxTaS2

Anisotropic transport and de Haas–van Alphen oscillations in quasi-one-dimensional Ta Pt Te 5

Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2

Three-dimensional topological semimetal phase in layered TaNi Te 5 probed by quantum oscillations

Structure and Transport Properties of the Quasi-One-dimensional Telluride Ta1.2Os0.8Te4

Structure and transport properties of the quasi-one-dimensional telluride Ta 1.2 Os 0.8 Te 4

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Topological Dirac states in a layered telluride TaPdTe 5 with quasi-one-dimensional PdTe 2 chains

In-Plane Anisotropy in the Layered Topological Insulator Ta 2 Ni 3 Te 5 Investigated via TEM and Polarized Raman Spectroscopy

Giant In-Plane Vibrational and Transport Anisotropy in Van Der Waals Ta2Ni3Te5

Weak anti-localization and spin-momentum locking in topological insulator Ta$_2$Ni$_3$Te$_5$

Topological Dirac States in a Layered Telluride TaPdTe_5 with Quasi-One-dimensional PdTe_2 Chains

Multiple Dirac nodal lines in an in-plane anisotropic semimetal TaNiTe 5

Broken Cubic Symmetry Driven Co-Emergence of Type-I and Type-Ii Dirac Points in Topological Crystalline Insulator ThTaN3

Anisotropic giant magnetoresistanceand de Hass–van Alphen oscillations in layered topological semimetal crystals