Abstract:In this work, in silico methods are used to study the temperature effect of the emission properties, including the electron work function, of quasi 2D glass-like carbon (GLC) films deposited on few/multi-layer Si/SiO2 substrates of two types. The equilibrium configuration of the structures under study at different temperatures is established by molecular dynamics (MD) method using reactive force field (ReaxFF) due to the polyatomic nature of supercells. The electronic structure is determined using the self-consistent charge density-functional based tight-binding (SCC-DFTB) method. The temperature range under consideration is 50-1000 K. The effect of one sub-strate layer and several substrate layers on the electronic structure and emission properties of GLC is considered. In the case of one layer of Si and SiO2, in fact, the functionalization of the GLC film occurs. This leads to a decrease in the work function by -6 % and -21 %, respectively, at a temperature of 300 K. As the temperature increased to 1000 K, the work function of the GLC with one SiO2 layer further decreased by -7 %. An increase in the substrate thickness to five Si layers and two SiO2 layers leads to a decrease in the work function by 7.3 % and 20.5 %, respectively. An increase in temperature leads to a change in the work function of the GLC with five Si substrate layers and two SiO2 layers by 0.2 % and 3.8 %, respectively.

Determination of the Temperature Coefficient of Linear Expansion of Materials Based on Silicon Carbide

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Thermal Expansion Behavior of Carbon Fiber Reinforced Chemical-Vapor-infiltrated Silicon Carbide Composites from Room Temperature to 1400 °C

Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations

Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K

Thermal expansion coefficient of single crystal silicon from 7 K to 293 K

Compressibility And Thermal Expansion Of Cubic Silicon Nitride

Linear thermal expansion coefficient (at temperatures from 130 to 800 K) of borosilicate glasses applicable for coupling with silicon in microelectronics

Investigation of the thermal expansion of the refractory materials at high temperatures

Effects of Particle Size on the Thermal Expansion Behavior of SiCp/Al Composites

EFFECTS OF FABRIC ARCHITECTURES ON THE THERMAL EXPANSION COEFFICIENT AND THE THERMAL DIFFUSIVITY OF CARBON FIBER REINFORCED SILICON CARBIDE COMPOSITES

Temperature-dependent Infrared Optical Properties of 3C-, 4H- and 6H-Sic

Thermal Equation of State of Silicon Carbide

Cubic silicon carbide under tensile pressure: Spinodal instability

Thermophysical and Mechanical Properties of A Three-Dimensional Hi-Nicalon/Sic Composite

Studies on thermophysical properties of SiC heat exchanger materials

Bending and Thermal Expansion Properties of 2.5D C/SiC Composites

Fabrication and thermal expansion behavior of SiO2-TiO2 ceramic filled PTFE composites

Negative thermal expansion coefficient and amorphization in defective 4H-SiC

The Thermal Expansion Behaviour of SiCp/Al–20Si Composites Solidified under High Pressures

Effect of Silicon Addition and Thermal History on the Thermal Expansion Behavior of Sic/Al Composites