Thermal Equation of State of Silicon Carbide

Yuejian Wang,Zhi T. Y. Liu,Sanjay V. Khare,Sean Andrew Collins,Jianzhong Zhang,Liping Wang,Yusheng Zhao

DOI: https://doi.org/10.1063/1.4941797

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of the bulk modulus at a constant pressure (∂K/∂T)P = −0.037(4) GPa K−1, volumetric thermal expansivity α(0, T) = a + bT with a = 5.77(1) × 10−6 K−1 and b = 1.36(2) × 10−8 K−2, and pressure derivative of the thermal expansion at a constant temperature (∂α/∂P)T = 6.53 ± 0.64 × 10−7 K−1 GPa−1. Furthermore, we found the temperature derivative of the bulk modulus at a constant volume, (∂KT/∂T)V, equal to −0.028(4) GPa K−1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. The computed results generally agree well with the experimentally determined values.