On melting of silicon carbide under pressure

Petr S. Sokolov,Vladimir A. Mukhanov,Thierry Chauveau,Vladimir L. Solozhenko

DOI: https://doi.org/10.48550/arXiv.1210.3244

2012-10-11

Materials Science

Abstract:The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

What problem does this paper attempt to address?

Molecular Dynamics Simulations for Melting Temperatures of Caf2

ZJ Liu,XL Cheng,XL Chen,XR Chen,JH Qi,HZ Guo

DOI: https://doi.org/10.3969/j.issn.1674-0068.2005.02.010

IF: 1.09

2005-01-01

Chinese Journal of Chemical Physics

Abstract:The molecular dynamics method has been applied to simulate the melting temperatures of CaF2 at elevated temperature and high pressure and to calculate the P similar to V equation of state of CaF2 up to 100 GPa at 300 K. The interatomic potential was taken to be the sum of pairwise additive Coulomb, van der Waals attractions, and repulsive interactions. In addition, the shell model was used in molecular dynamics simulation. The pressure dependence of the melting temperature of CaF2 was predicted up to 4 GPa. However, in order to account for the superheating melting of the molecular dynamic simulation, the simulated melting temperatures of CaF2 were corrected by the modem theory of melting. Consequently, the melting temperatures of CaF2 were accurately obtained at elevated temperature and high pressure. Therefore, it is shown that shell-model molecular dynamics simulation at constant pressure indeed provides a useful tool for studying the melting temperatures of other materials under high pressures.
Elastic Property of SiC-Diamond Composite under Hydrostatic Pressure

Zhi-Gang WANG,Liang XU,Xu-Hai LI,Hai-Kuo WANG,Duan-Wei HE,Chuan-Min MENG

DOI: https://doi.org/10.11858/gywlxb.2015.04.004

2015-01-01

Abstract:The longitudinal and shear sound velocities (v p and v s )of SiC-diamond composite under hydrostatic pressure were measured simultaneously in a multi-anvil apparatus,and the relationship between modulus and pressure was also obtained.v p and v s increase with increasing pressure in the pressure range of 0 to 1.4 GPa and keep stable at higher pressure.The variations of sound velocities are attributed to the closing procession of micro voids and cracks during compression.The bulk modu-lus of SiC-diamond composite is higher than the shear modulus at ambient pressure,whereas the bulk modulus increases faster than the shear modulus with increasing pressure and exceeds the shear modu-lus at 1.4 GPa.In the pressure range of 1.4 to 4.3 GPa,the bulk and shear modulus of SiC-diamond composite are about 360 and 350 GPa,respectively.
Cubic silicon carbide under tensile pressure: Spinodal instability

Carlos P. Herrero,Rafael Ramirez,Gabriela Herrero-Saboya

DOI: https://doi.org/10.1016/j.chemphys.2023.112005

2023-07-19

Abstract:Silicon carbide is a hard, semiconducting material presenting many polytypes, whose behavior under extreme conditions of pressure and temperature has attracted large interest. Here we study the mechanical properties of 3C-SiC over a wide range of pressures (compressive and tensile) by means of molecular dynamics simulations, using an effective tight-binding Hamiltonian to describe the interatomic interactions. The accuracy of this procedure has been checked by comparing results at T = 0 with those derived from ab-initio density-functional-theory calculations. This has allowed us to determine the metastability limits of this material and in particular the spinodal point (where the bulk modulus vanishes) as a function of temperature. At T = 300 K, the spinodal instability appears for a lattice parameter about 20% larger than that corresponding to ambient pressure. At this temperature, we find a spinodal pressure P_s = -43 GPa, which becomes less negative as temperature is raised (P_s = -37.9 GPa at 1500 K). These results pave the way for a deeper understanding of the behavior of crystalline semiconductors in a poorly known region of their phase diagrams.

Materials Science,Chemical Physics
Thermal Equation of State of Silicon Carbide

Yuejian Wang,Zhi T. Y. Liu,Sanjay V. Khare,Sean Andrew Collins,Jianzhong Zhang,Liping Wang,Yusheng Zhao

DOI: https://doi.org/10.1063/1.4941797

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of the bulk modulus at a constant pressure (∂K/∂T)P = −0.037(4) GPa K−1, volumetric thermal expansivity α(0, T) = a + bT with a = 5.77(1) × 10−6 K−1 and b = 1.36(2) × 10−8 K−2, and pressure derivative of the thermal expansion at a constant temperature (∂α/∂P)T = 6.53 ± 0.64 × 10−7 K−1 GPa−1. Furthermore, we found the temperature derivative of the bulk modulus at a constant volume, (∂KT/∂T)V, equal to −0.028(4) GPa K−1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. The computed results generally agree well with the experimentally determined values.
In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

GA Voronin,C Pantea,TW Zerda,L Wang,Y Zhao

DOI: https://doi.org/10.1103/physrevb.68.020102

2003-01-01

Abstract:In situ x-ray diffraction measurements of silicon were conducted in the pressure range 6-15.5 GPa and at temperatures up to 1073 K. The results were used to improve the phase diagram for silicon. The pressure range where the Si I I phase is stable in the temperature interval 293-973 K was found. The positions of the Si I -Si I I , Si I I -Si X I , Si X I -Si V equilibrium lines and the Si I -Si I I -Si L , Si I I -Si X I -Si L , Si X I -Si V -Si L triple points were determined.
Melting and decomposition of orthorhombic B6Si under high pressure

Vladimir L. Solozhenko,Vladimir A. Mukhanov,Vadim V. Brazhkin

DOI: https://doi.org/10.1080/08957959.2020.1832487

2020-08-07

Abstract:Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting curve exhibits negative slope of -31(2) K/GPa that points to a higher density of the melt as compared to the solid phase. At very high temperatures B6Si melt appears to be unstable and undergoes disproportionation into silicon and boron-rich silicides. The onset temperature of disproportionation strongly depends on pressure, and the corresponding low-temperature boundary exhibits negative slope of -92(3) K/GPa which is indicative of significant volume decrease in the course of B6Si melt decomposition.

Materials Science
Microstructural Evolution and Mechanical Properties of SiC/Al-40Si Composites Fabricated by High Pressure Solidification.

Rong Zhang,Chunming Zou,Zunjie Wei,Hongwei Wang

DOI: https://doi.org/10.3390/ma16124312

IF: 3.4

2023-01-01

Materials

Abstract:The microstructure and mechanical properties of SiC/Al-40Si composites prepared under high pressure were studied. As the pressure increases from 1 atm to 3 GPa, the primary Si phase in the Al-40Si alloy is refined. With increasing pressure, the composition of the eutectic point increases, the solute diffusion coefficient decreases exponentially, and the concentration of Si solute at the front of the solid-liquid interface of the primary Si is low, which contributes to the refining of the primary Si and inhibiting its faceted growth. The bending strength of SiC/Al-40Si composite prepared under 3 GPa was 334 MPa, which was 66% higher compared to the Al-40Si alloy prepared under the same pressure.
Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Bin Liang,Zhihua Yang,Qingqing Chen,Shengjin Wang,Xiaoming Duan,Dechang Jia,Yu Zhou,Kun Luo,Dongli Yu,Yongjun Tian

DOI: https://doi.org/10.1111/jace.13807

IF: 4.186

2015-01-01

Journal of the American Ceramic Society

Abstract:The crystallization behavior of amorphous Si2BC3N monoliths by heating at 1000°C–1400°C and 5 GPa was investigated with the special attention to the nucleation mechanisms of β‐SiC and BN(C) phases. Nanoscale puckered structures arising in particle bridging areas were found and its evolution behavior well reflected the nucleation process of nanocrystallites. The temperature‐dependent crystallization of amorphous Si2BC3N monoliths at 5 GPa passes through four stages: The material remains amorphous below 1100°C. It undergoes partial phase segregation (1100°C–1200°C), followed by initiation of nucleation (1200°C–1250°C), and then nucleation and growth of β‐SiC and turbostratic BN(C) crystallites (>1250°C). The first principles calculation indicates the nucleation precedence of BN(C) phase over β‐SiC. BN(C) nucleates preferentially at bridges between ceramic particles causing SiC to concentrate in particle interiors thus forming capsule‐like structures.
On melting of boron phosphide under pressure

Vladimir L. Solozhenko,Vladimir A. Mukhanov

DOI: https://doi.org/10.48550/arXiv.1511.05995

2015-11-17

Materials Science

Abstract:Melting of cubic boron phosphide, BP has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve exhibits negative slope -60(7) K/GPa, which is indicative of a higher density of the melt as compared to the solid phase.
Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Jiayu Wang,Qiang Zhou,Siyang Guo,Yanping Huang,Xiaoli Huang,Lu Wang,Fangfei Li,Tian Cui

DOI: https://doi.org/10.1088/0256-307x/37/6/066201

2020-01-01

Chinese Physics Letters

Abstract:Silane (SiH4) is a promising hydrogen-rich compound for pursing high temperature superconducting. Previous high pressure measurements of Raman, x-ray diffraction and theoretical studies on SiH(4)mainly focused on its polymorphic structures above 50 GPa, while the structure and the stability under lower pressure range are still unclear. Here we report an investigation of condensed SiH(4)by Brillouin scattering measurements at high temperature up to 407 K and high pressure up to 18 GPa. Brillouin scattering frequencies of fluid SiH(4)under compression are obtained under isothermal conditions of 300 K, 359 K and 407 K. The SiH(4)becomes unstable with increasing temperature and subsequently decomposes into silicon and H-2. We find that compression at room temperature induces two velocity anomalies corresponding to a fluid-solid state transition and a phase IV to phase V transition, respectively. Brillouin scattering spectra has been a powerful tool to investigate the fruitful phases and structure transitions in the hydrogen-rich compound under extreme conditions.
Melting and Subsolidus Relations of SiO2 at 9–14 GPa

JZ ZHANG,RC LIEBERMANN,T GASPARIK,CT HERZBERG,YW FEI

DOI: https://doi.org/10.1029/93jb02218

1993-01-01

Journal of Geophysical Research

Abstract:Experiments were performed on amorphous silica at temperatures of 1000°–2850°C and pressures of 9–14 GPa using a 2000‐t uniaxial split‐sphere multianvil apparatus (USSA‐2000). The melting curve of coesite was extended from 8 to 13.7 GPa, and the melting temperatures indicate a slope that is almost independent of pressure. Melting of stishovite was observed at 2850°C and 14 GPa. The triple point for coexisting coesite, stishovite, and melt was located at 2800°C and 13.7 GPa. The coesite‐stishovite phase transition was determined between 2000° and 2800°C and is described by the equation P (GPa) = 5.8(4) + 0.0028(2)T(°C). The resulting dP/dT slope is more than twice that determined in the in situ X ray study of Yagi and Akimoto (1976). The present coesite‐stishovite boundary cannot be predicted by existing thermodynamic data (e.g., Fei et al., 1990), which suggests some uncertainties in the extrapolation of heat capacities of coesite and stishovite at high temperatures. Thermodynamic extrapolations of the metastable melting curves of quartz and coesite show a strongly negative slope and thus are consistent with the proposal that the room temperature amorphization of quartz and coesite results from crossing of the metastable extension of their melting curves.
Ab initio constraints on silica melting to 500 GPa

Ming Geng,Chris E. Mohn

DOI: https://doi.org/10.1103/PhysRevB.109.024106

2023-11-19

Abstract:The melting curve of pure silica (SiO$_2$) was determined using {\it ab initio} density functional theory together with the solid-liquid coexisting approach, thermodynamic integration and the Z method. The melting curves are consistent with a smooth slow increase in a large region from 50 GPa (dT/dP $\approx$ 15 K/GPa) to about 500 GPa (dT/dP $\approx$ 5 K/GPa) without any abrupt changes at around 120 GPa and 300 GPa as seen in some recent experimental and computational studies. The topography of the melting curve above 50 GPa is consistent with a gradual change in the distribution of the Si coordination numbers in the liquid state and the absence of large changes in the density following solid-solid phase transitions. The pair distribution functions show that the structural correlation in the liquid is mainly short-ranged and that the Si-O bond is stiff. The densification of the melt structure with pressure above 50 GPa is therefore due to an increase in 7- and 8-fold coordinated silicon.

Materials Science,Geophysics
Structural and dynamic features of liquid Si under high pressure above the melting line minimum

T. Demchuk,T. Bryk,A. P. Seitsonen

DOI: https://doi.org/10.48550/arXiv.2009.00834

2020-09-02

Abstract:We report an {\it ab initio} simulation study of changes in structural and dynamic properties of liquid Si at 7 pressures ranging from 10.2 GPa to 24.3 GPa along the isothermal line 1150~K, which is above the minimum of the melting line. The increase of pressure from 10.2 GPa to 16 GPa causes strong reduction in the tetrahedral ordering of the most close neighbors. The diffusion coefficient shows a linear decay vs drop in atomic volume, that agrees with theoretical prediction for simple liquid metals, thus not showing any feature at the pressures corresponding to the different crystal phase boundaries. The Fourier-spectra of velocity autocorrelation function shows two-peak structure at pressures 20 GPa and higher. These characteristic frequencies correspond well to the peak frequencies of the transverse current spectral function in the second pseudo-Brillouin zone. Two almost flat branches of short-wavelength transverse modes were observed for all the studied pressures. We discuss the pressure evolution of characteristic frequencies in the longitudinal and transverse branches of collective modes.

Disordered Systems and Neural Networks,Materials Science
Effect of Hexagonality on the Pressure-Dependent Lattice Dynamics of 4H-Sic

Junran Zhang,Tao Liang,Yunhao Lu,Binjie Xu,Tianqi Deng,Yiqiang Zhang,Zhidan Zeng,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1367-2630/ac9c79

2022-01-01

New Journal of Physics

Abstract:The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell, and compared with those of 3C- and 6H-SiC. It is found that both the zone-center longitudinal optical (LO) and transverse optical (TO) modes shift to higher frequencies with the increase of the applied pressures. This indicates that polymorph transitions are unlikely to happen under the (quasi-)hydrostatic pressure. The LO-TO splitting is described well by the cubic function with respect to the applied pressure. A decrease in the LO-TO splitting is observed above 33 GPa. The change of transverse effective charge and thus the ionic character of 4H-SiC exhibits a cubic dependence on the pressure due to the nonequivalent lattice dynamics parallel and perpendicular to the c-axis of 4H-SiC. Compared to what happens in 6H-SiC, the high pressure exerts higher effect on the ionic character of 4H-SiC because less nonequivalent bilayers are evolved. At last, the mode-Gruneisen parameters of the LO and TO modes at the Gamma point are determined. Given the hexagonal lattice of 4H-SiC, the LO mode are softer than the TO mode.
Structure and physical properties of predicted MAX phase V 2 SiC under pressure: A first principle calculation

Xuelu Wei,Laishi Li,Yusheng Wu,Feng Liu

DOI: https://doi.org/10.1016/j.mtcomm.2023.105907

IF: 3.8

2023-04-06

Materials Today Communications

Abstract:MAX-phase materials are important for technical applications in different fields, where pressure can change the microstructure and thus the properties of the material. In this paper, the structural, electronic, mechanical, thermodynamic, and optical properties of the new ternary layered ceramic MAX phase V 2 SiC are investigated under different pressures based on DFT simulations. A greater stiffness along the c-axis than along the a-axis direction and a negative enthalpy of formation confirm the thermodynamic stability of the pressurized phase. Although the band structure is altered under pressure, the metallic properties are retained. The coexistence of its covalent, metallic, and ionic bonds is observed in the charge density diagram. The elastic constants satisfy the Born stability criterion, ensuring mechanical stability under pressurized and unpressurized conditions. The increase in υ from 0.239 to 0.279 indicates that the compound changes from brittle to ductile, with the maximum ductility observed at 20 GPa. Phonon calculations show its kinetic stability, and Helmholtz free energy, enthalpy, entropic specific heat capacity, and Debye temperature are also calculated. Optical properties show that V 2 SiC is suitable for optoelectronic devices in the visible and UV regions and also as a coating material to reduce the heat from sunlight at high pressures up to 10 GPa. This is the first comprehensive theoretical study of the properties of V 2 SiC and may provide a reference for future research, the results of which still require subsequent experimental verification.

materials science, multidisciplinary
Phase Transitions and Elastic Anisotropies of SiC Polymorphs under High Pressure

Zheng Ran,Chunming Zou,Zunjie Wei,Hongwei Wang,Rong Zhang,Ning Fang

DOI: https://doi.org/10.1016/j.ceramint.2020.10.197

IF: 5.532

2020-01-01

Ceramics International

Abstract:The structures, equations of state, phase transitions, mechanical stability, and elastic anisotropies of five SiC polymorphs (wurtzite, 4H, 6H, zinc blende, and rocksalt phases) under pressure were investigated based on first-principles calculations. The optimal structural parameters, densities, and volumes of the five SiC polymorphs under zero and high pressure were obtained and analyzed. The pressures of the phase and stability–instability transitions were predicted using the minimum energy principle and improved Born mechanical stability criteria, respectively, and a new phase transition criterion was developed. The elastic anisotropies of SiC under zero and high pressure were systematically discussed, and the negative Poisson's ratio of zinc blende SiC was verified.
The Thermal Expansion Behaviour of SiCp/Al–20Si Composites Solidified under High Pressures

Zunjie Wei,Pan Ma,Hongwei Wang,Chunming Zou,Sergio Scudino,Kaikai Song,Konda G. Prashanth,Wei Jiang,Juergen Eckert

DOI: https://doi.org/10.1016/j.matdes.2014.08.070

2014-01-01

Materials & Design (1980-2015)

Abstract:Al-20Si matrix composites reinforced with SiC particles have been fabricated by high pressure solidification and the effects of solidification pressure and SiC volume fraction on the thermal expansion behaviour have been systematically investigated. A peak of the coefficient of thermal expansion (CTE) is observed during the first heating process due to the precipitation of Si from the supersaturated Al(Si) solid solution, whereas the CTE increases monotonically during the second heating process. The Al-20Si alloy solidified at 3 GPa shows the lowest CTE value during the second heating as a result of the modification of the eutectic silicon and of the small size and high volume fraction of the precipitated Si particles. The CTE of the composite decreases with increasing the SiC content in both heating processes. The theoretical model agrees well with the experimental results and our study indicates that high pressure solidification is a promising route for the development of SiCp/Al-Si composites for packaging applications. (C) 2014 Published by Elsevier Ltd.
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

H. M. Ayedh,V. Bobal,R. Nipoti,A. Hallén,B. G. Svensson

DOI: https://doi.org/10.1063/1.4837996

IF: 2.877

2014-01-07

Journal of Applied Physics

Abstract:As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples consisted of a n-type high-purity epitaxial layer grown on 4° off-axis ⟨0001⟩ n+-substrate and the evolution of the carbon vacancy (VC) concentration in the epitaxial layer was monitored by deep level transient spectroscopy via the characteristic Z1/2 peak. Z1/2 appears at ∼0.7 eV below the conduction band edge and arises from the doubly negative charge state of VC. The concentration of VC increases strongly after treatment at temperatures ≥ 1600 °C and it reaches almost 1015 cm−3 after the inductive heating at 1950 °C. A formation enthalpy of ∼5.0 eV is deduced for VC, in close agreement with recent theoretical predictions in the literature, and the entropy factor is found to be ∼5 k (k denotes Boltzmann's constant). The latter value indicates substantial lattice relaxation around VC, consistent with VC being a negative-U system exhibiting considerable Jahn-Teller distortion. The microwave heated samples show evidence of non-equilibrium conditions due to the short duration used and display a lower content of VC than the inductively heated ones. Finally, concentration-versus-depth profiles of VC favour formation in the “bulk” of the epitaxial layer as the prevailing process and not a Schottky type process at the surface.

physics, applied
Influence of High Pressure on the Threshold Displacement Energies in Silicon Carbide: A Car–Parrinello Molecular Dynamics Approach

Shijun Zhao,Jianming Xue,Chune Lan,Lixin Sun,Yugang Wang,Sha Yan

DOI: https://doi.org/10.1016/j.nimb.2011.12.035

2012-01-01

Abstract:The threshold displacement energies in silicon carbide under different pressures are determined with ab initio molecular dynamics. The results show that the threshold displacement energies change anisotropically in different crystallographic directions when high pressure is applied. However, the weighted average values for both the C and Si sublattice, which determine the defect production in a material under irradiation, are found to increase significantly with increasing external pressures. Besides, we have observed some new defect structures under high pressures which are not observed at ambient conditions. Our results show that irradiation under high pressures could decrease the production rate of point defects in SiC, thus greatly enhancing its resistivity against radiation damage. The combination of irradiation and high pressure technique hence provides a pathway to obtain new structure materials.
On the High-Pressure Behavior of Periodic Mesoscale SBA-16 Silica/carbon Composites: Studies at 10 GPa Between 25 and 1800 °C

Paritosh Mohanty,Yingwei Fei,Kai Landskron

DOI: https://doi.org/10.1080/08957950903399667

2009-01-01

High Pressure Research

Abstract:We report on the structural transformations of carbon filled SBA-16 mesoporous silica at 10 Gigapascal pressure and temperatures between 25 and 1800 degrees C in a multi-anvil apparatus. The silica begins to crystallize in the coesite structure at 400 degrees C under retention of the mesophase order. An irregular mesostructure of crystalline coesite is observed for samples treated at 800 degrees C. Formation of crystalline stishovite and graphite under mesoscale phase separation is observed at 1000 degrees C and 1300 degrees C. From a temperature of 1400 degrees C, the stishovite phase transforms into coesite and graphite transforms into diamond, respectively. The diamond phase adopts a micron-sized platelet-like morphology at 1400-1800 degrees C. The diamond crystallite size was determined to be 9-12nm.

On melting of silicon carbide under pressure

Molecular Dynamics Simulations for Melting Temperatures of Caf2

Elastic Property of SiC-Diamond Composite under Hydrostatic Pressure

Cubic silicon carbide under tensile pressure: Spinodal instability

Thermal Equation of State of Silicon Carbide

In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

Melting and decomposition of orthorhombic B6Si under high pressure

Microstructural Evolution and Mechanical Properties of SiC/Al-40Si Composites Fabricated by High Pressure Solidification.

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

On melting of boron phosphide under pressure

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Melting and Subsolidus Relations of SiO2 at 9–14 GPa

Ab initio constraints on silica melting to 500 GPa

Structural and dynamic features of liquid Si under high pressure above the melting line minimum

Effect of Hexagonality on the Pressure-Dependent Lattice Dynamics of 4H-Sic

Structure and physical properties of predicted MAX phase V 2 SiC under pressure: A first principle calculation

Phase Transitions and Elastic Anisotropies of SiC Polymorphs under High Pressure

The Thermal Expansion Behaviour of SiCp/Al–20Si Composites Solidified under High Pressures

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Influence of High Pressure on the Threshold Displacement Energies in Silicon Carbide: A Car–Parrinello Molecular Dynamics Approach

On the High-Pressure Behavior of Periodic Mesoscale SBA-16 Silica/carbon Composites: Studies at 10 GPa Between 25 and 1800 °C