In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

GA Voronin,C Pantea,TW Zerda,L Wang,Y Zhao
DOI: https://doi.org/10.1103/physrevb.68.020102
2003-01-01
Abstract:In situ x-ray diffraction measurements of silicon were conducted in the pressure range 6-15.5 GPa and at temperatures up to 1073 K. The results were used to improve the phase diagram for silicon. The pressure range where the Si I I phase is stable in the temperature interval 293-973 K was found. The positions of the Si I -Si I I , Si I I -Si X I , Si X I -Si V equilibrium lines and the Si I -Si I I -Si L , Si I I -Si X I -Si L , Si X I -Si V -Si L triple points were determined.
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