High pressure superconductivity of silicon

J.M. Mignot,G. Chouteau,G. Martinez

DOI: https://doi.org/10.1016/0378-4363(85)90473-5

1985-12-01

Physica B+C

Abstract:We report detailed investigations of the superconducting properties of silicon in its high-pressure β-Sn and primitive hexagonal (ph) phases.Resistivity measurements have been performed on two single crystals of p-type silicon (≈1016 cm−3, ϱ(300)≅0.5 ohms cm) using an improved Bridgman-type device, with sintered-diamond anvils. In both phases, silicon is superconducting. In the β-Sn modification (Si II), we find Tc=6.3K with a very small value of dTc/dP, in good agreement with earlier results.In the hexagonal phase (Si V), Tc, goes through a maximum at 2.8. K near the II/V phase boundary, then steadily decreases down to 3.6 K at 25 GPa.Comparison is made to the calculations of Chang et al. The theory correctly predicts the decrease of Tc in the ph phase. A reasonable agreement is also found between the calculated superconducting and those deduced from the experimental Tc's.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is whether different phases of silicon will exhibit superconducting properties under high - pressure conditions, especially the superconducting characteristics of its β - Sn phase (Si II) and the primitive hexagonal phase (Si V). Specifically, the researchers experimentally measured the resistivity changes of two single - crystal p - type silicon under different pressures and observed the phenomenon that these phases transform into superconducting states at low temperatures. The focus of the study is to determine the superconducting transition temperature \(T_c\) of these phases and its variation law with pressure, as well as the comparative analysis between these experimental results and theoretical calculations.

The paper mentions that silicon will undergo a transition from the semiconductor phase with a conventional diamond structure to a new tetragonal metal phase (i.e., the β - Sn phase) at a pressure of about 10 GPa, and then further transform into the primitive hexagonal phase at a higher pressure. It is found that silicon exhibits superconducting properties in both of these phases. For the β - Sn phase, the superconducting transition temperature \(T_c\) is approximately 6.3 K, and the slope of the change with pressure \(\frac{dT_c}{dP}\) is very small; while in the primitive hexagonal phase, \(T_c\) first reaches a maximum value of 8.2 K as the pressure increases, and then gradually decreases to 3.6 K (at 25 GPa). In addition, the author also discussed the consistency between these experimental results and the theoretical predictions of Chang et al., especially in the decreasing trend of \(T_c\) in the hexagonal phase.

In summary, this study aims to explore the superconducting behavior of silicon under high - pressure conditions and its degree of agreement with theoretical models, providing important experimental evidence for understanding the physical properties of silicon under extreme conditions.