Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxy

K. Ogata,T. Honden,T. Tanite,T. Komuro,K. Koike,S. Sasa,M. Inoue,M. Yano
DOI: https://doi.org/10.1116/1.1690777
2004-01-01
Abstract:Etching of high-quality ZnO layers grown by molecular-beam epitaxy was examined by using electron-cyclotron-resonance plasma etching. Etching rates of ZnO layers were larger using CH4 than CF4, and four times more enhanced by using a mixture of the two gases. For a ZnO surface covered with photoresist layers by the plasma-etching procedure, degradation was mostly recovered by thermal annealing in an O2 atmosphere at the proper temperatures. This was found to be effective for the recovery of the layers.
physics, applied,materials science, coatings & films
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