Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Comparative Surfacing Studies of Sputtered and Thermal Annealed ZnO Films Wet Etched with NH 4 Cl and Acidic Etchants

Surface Uniform Wet Etching of ZnO Films and Influence of Oxygen Annealing on Etching Properties

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Influence of water content in mixed solvent on surface morphology, wettability, and photoconductivity of ZnO thin films.

Effect of solution concentration on surface morphology, optical properties and solar light response of ZnO thin films

Properties of Texture-etched ZnO∶Al Substrates

Regrowth of Zno Thin Film with High Surface Flatness and Enhanced Optical Properties on Annealed Buffer Layers by Rf Sputtering Deposition

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Influence of Etchants on Etched Surfaces of High-Strength and High-Conductivity Cu Alloy of Different Processing States

Wet Chemical Etching of Transparent Conducting Ga-Doped ZnO Thin Films by Oxalic and Formic Acid

Preparation and optical characteristics of ZnO films by chelating sol-gel method

Thermal annealing effect on optical properties of electrodeposited ZnO thin films

Texture surfaces and etching mechanism of ZnO:Al films by a neutral agent for solar cells

Effect of wet chemical etching on femtosecond laser fabricated surface microstructure of polycrystalline ZnS

Study on the annealed ZnO films grown by plasma-assisted MOCVD

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing