Abstract:Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals, that are of particular relevance for short wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. We present p-type doping of InAs nanocrystals with Zn-enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping was achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near IR photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short wave IR region utilizing heavy-metal free nanocrystal building blocks.

p type doping of zinc oxide by arsenic ion implantation

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation

Arsenic Doping for Synthesis of Nanocrystalline P-Type ZnO Thin Films

The study of rapid thermal annealing on arsenic-doped ZnO for the p-type ZnO formation

Preparation Of P-Type Zno :(Al, N) By A Combination Of Sol-Gel And Ion-Implantation Techniques

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Zn-doped P-type InAs Nanocrystal Quantum Dots

As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets

Electrical Characterization of N+-implanted N-Type ZnO Single Crystals: P-N Homojunction and Deep Level Defects

P-type Single-Crystalline ZnO Films Obtained by (li, N) Dual Implantation Through Dynamic Annealing Process

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

P-Type Conduction in Zn-Ion Implanted Inn Films

Co-doping: an Effective Strategy for Achieving Stable P-Type ZnO Thin Films

Optical Properties Investigation of P-Type Zno Film Based on Doping by Diffusion

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

P-Type Doping Of Gan By Mg+ Implantation